PDB-C134F

Series:	--
Packaging:	Bulk
Part Status:	Active
Wavelength:	950nm
Color - Enhanced:	Blue
Spectral Range:	700nm ~ 1100nm
Diode Type:	PIN
Responsivity @ nm:	--
Response Time:	10ns
Voltage - DC Reverse (Vr) (Max):	100V
Current - Dark (Typ):	2nA
Active Area:	1.538mm²
Viewing Angle:	30°
Operating Temperature:	-40°C ~ 80°C
Mounting Type:	Through Hole
Package / Case:	Radial, 3mm Dia (T-1)

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<p> Photodiodes are a type of optical sensor composed of a semiconductor junction that uses light to generate electric current (or voltage change) within the device. One popular type is the PDB-C134F photodiode, which is used in a variety of photodetection applications such as image sensing, ambient light detection, and infrared measurement. In this article, we will look at the PDB-C134F photodiode\'s application field and working principle.</p><p><strong>Application Field</strong></p><p>The PDB-C134F is designed for applications requiring precise and fast response times. It is suitable for measuring light from visible to near infrared (NIR), making it a versatile photodetector for both active and passive infrared applications. Specifically, the PDB-C134F is used for sensing image data, monitoring ambient light in order to adjust display brightness, and even detecting motion. It is also suitable for industrial and automotive applications as it can be operated in a temperature range from -65°C to +105°C.</p><p>The PDB-C134F is a linear photodiode, meaning that its output current (or voltage) is proportional to the incoming light intensity. This allows the photodiode to accurately measure a wide range of light intensities, making it ideal for applications such as monitoring ambient light in order to adjust the display brightness. It also has a large dynamic range, meaning that it can measure a wide range of light intensities without saturating.</p><p><strong>Working Principle</strong></p><p>The PDB-C134F photodiode is composed of a PN junction that consists of a semi-insulating substrate and a very thin layer of lightly doped n-type material. When an external light source is incident on the junction, electrons in the n-type material are excited into conductive states. This creates an electric current that is proportional to the incident light intensity. This current is then collected by the contacts on the sides of the diode and used as the output signal.</p><p>The PDB-C134F also features high speed response times, meaning that it can measure changes in light intensity very quickly. This makes it ideal for applications where changes in light intensity need to be detected quickly, such as in the case of motion detection.</p><p>The PDB-C134F also has a high photoresponse, meaning that it can detect very small changes in light intensity, making it ideal for applications such as image sensing. It also has a low “Dark Current”, meaning that it will not generate false signals when no external light is present.</p><p>In conclusion, the PDB-C134F is an ideal photodiode for a wide range of photodetection applications. Its linear response, combined with its high speed, high sensitivity, and low dark current make it well suited for applications such as image sensing, ambient light detection, and motion detection.</p>

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