Allicdata Part #: | PDB-C158F-ND |
Manufacturer Part#: |
PDB-C158F |
Price: | $ 3.25 |
Product Category: | Sensors, Transducers |
Manufacturer: | Luna Optoelectronics |
Short Description: | PHOTODIODE BLUE W/DF 9MM SQ BLK |
More Detail: | Photodiode 660nm 50ns 120° Radial |
DataSheet: | PDB-C158F Datasheet/PDF |
Quantity: | 953 |
1 +: | $ 2.94840 |
10 +: | $ 2.45700 |
25 +: | $ 2.06388 |
100 +: | $ 1.76904 |
250 +: | $ 1.57248 |
500 +: | $ 1.42506 |
1000 +: | $ 1.30712 |
2500 +: | $ 1.25307 |
5000 +: | $ 1.21867 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Wavelength: | 660nm |
Color - Enhanced: | Blue |
Spectral Range: | 700nm ~ 1100nm |
Diode Type: | PIN |
Responsivity @ nm: | -- |
Response Time: | 50ns |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Dark (Typ): | 2nA |
Active Area: | 9mm² |
Viewing Angle: | 120° |
Operating Temperature: | -40°C ~ 80°C |
Mounting Type: | Through Hole |
Package / Case: | Radial |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A photodiode is a semiconductor device typically used in Optical Sensors that convert light into electrical current. The PDB-C158F is one type of photodiode known for its fast response time and low capacitance. It is a PIN diode composed of a wide-band gap n-type material surrounded by a thick p-type layer, and a very thin p-type layer near the junction. The thin layer of material at the junction allows for very high electric fields that give the PDB-C158F a fast response time.
The PDB-C158F is often used in applications where quick signal detection is desired. By utilizing the fast response time of the photodiode, these types of applications can achieve accurate signal detection in a fraction of the time compared to other sensing technologies. The PDB-C158F is commonly used in optical sensing applications because of its high sensitivity to light, and its ability to detect a wide range of light levels. Additionally, the PDB-C158F can be used in photovoltaic applications due to its ability to detect low intensity light levels over long periods of time.
The working principle of the PDB-C158F is based on the principles of photoconductivity. When a photon of sufficient energy is absorbed by the semiconductor material, electrons in the material are excited to higher energy levels. Once the electron leaves its energy level, it creates a free charge, which can result in a current flowing through the material. This current is what the photodiode detects and is used to measure the amount of light detected.
The PDB-C158F can be used to detect both visible and infrared light. When used to detect visible light, the photodiode is typically operated in reverse bias mode, which causes a large potential difference between the p-type and n-type layers, allowing a large reverse current to flow. When used to detect infrared light, the photodiode is typically used in a forward bias configuration, which causes a voltage drop across the diode, resulting in a small current which is proportional to the amount of light detected.
In addition to its fast response time and low capacitance, the PDB-C158F has a very low noise level and high stability, allowing it to be used in applications where reliable signal detection is required. It is also very low cost and can be easily incorporated into a variety of applications. All of these factors make the PDB-C158F an ideal choice for applications where quick detection of light is desired.
The specific data is subject to PDF, and the above content is for reference
PHOTODIODE SILICON FLAT TO-46Photodiode ...
PHOTODIODE BLUE FIBER OPTIC STPhotodiode...
PHOTODIODE BLUE 2.03MM SQ TO-46Photodiod...
PHOTODIODE BLUE ENH 2.6X1.2 CERMPhotodio...
PHOTO DETECTOR 0.8MMPhotodiode
PHOTO DETECTOR 0.8MM TO-46Photodiode