PDB-C158F Allicdata Electronics
Allicdata Part #:

PDB-C158F-ND

Manufacturer Part#:

PDB-C158F

Price: $ 3.25
Product Category:

Sensors, Transducers

Manufacturer: Luna Optoelectronics
Short Description: PHOTODIODE BLUE W/DF 9MM SQ BLK
More Detail: Photodiode 660nm 50ns 120° Radial
DataSheet: PDB-C158F datasheetPDB-C158F Datasheet/PDF
Quantity: 953
1 +: $ 2.94840
10 +: $ 2.45700
25 +: $ 2.06388
100 +: $ 1.76904
250 +: $ 1.57248
500 +: $ 1.42506
1000 +: $ 1.30712
2500 +: $ 1.25307
5000 +: $ 1.21867
Stock 953Can Ship Immediately
$ 3.25
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Wavelength: 660nm
Color - Enhanced: Blue
Spectral Range: 700nm ~ 1100nm
Diode Type: PIN
Responsivity @ nm: --
Response Time: 50ns
Voltage - DC Reverse (Vr) (Max): 50V
Current - Dark (Typ): 2nA
Active Area: 9mm²
Viewing Angle: 120°
Operating Temperature: -40°C ~ 80°C
Mounting Type: Through Hole
Package / Case: Radial
Description

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A photodiode is a semiconductor device typically used in Optical Sensors that convert light into electrical current. The PDB-C158F is one type of photodiode known for its fast response time and low capacitance. It is a PIN diode composed of a wide-band gap n-type material surrounded by a thick p-type layer, and a very thin p-type layer near the junction. The thin layer of material at the junction allows for very high electric fields that give the PDB-C158F a fast response time.

The PDB-C158F is often used in applications where quick signal detection is desired. By utilizing the fast response time of the photodiode, these types of applications can achieve accurate signal detection in a fraction of the time compared to other sensing technologies. The PDB-C158F is commonly used in optical sensing applications because of its high sensitivity to light, and its ability to detect a wide range of light levels. Additionally, the PDB-C158F can be used in photovoltaic applications due to its ability to detect low intensity light levels over long periods of time.

The working principle of the PDB-C158F is based on the principles of photoconductivity. When a photon of sufficient energy is absorbed by the semiconductor material, electrons in the material are excited to higher energy levels. Once the electron leaves its energy level, it creates a free charge, which can result in a current flowing through the material. This current is what the photodiode detects and is used to measure the amount of light detected.

The PDB-C158F can be used to detect both visible and infrared light. When used to detect visible light, the photodiode is typically operated in reverse bias mode, which causes a large potential difference between the p-type and n-type layers, allowing a large reverse current to flow. When used to detect infrared light, the photodiode is typically used in a forward bias configuration, which causes a voltage drop across the diode, resulting in a small current which is proportional to the amount of light detected.

In addition to its fast response time and low capacitance, the PDB-C158F has a very low noise level and high stability, allowing it to be used in applications where reliable signal detection is required. It is also very low cost and can be easily incorporated into a variety of applications. All of these factors make the PDB-C158F an ideal choice for applications where quick detection of light is desired.

The specific data is subject to PDF, and the above content is for reference

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