PDI-V115-F

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

A photodiode (PDI-V115-F) is an optical semiconductor device that converts light into an electric current. It is composed of two distinct components – a PN junction diode and a photosensitive surface. The PDI-V115-F is a type of PIN photodiode specifically designed for the infrared region of the electromagnetic spectrum. It has a photosensitive area of 95 µm2, and it is operated in reverse bias.

In many applications, a photodiode is used as a detector in an optical system that converts incident light energy into an electric current. The incident light is typically focused onto the photosensitive surface of the device. This causes a flow of electrons that generate an electrical current, which is then measured by an external means. The magnitude of the current is proportional to the intensity of the incident light.

Photodiodes are used in a wide range of applications, such as night vision, medical imaging, communications, and surveillance. The PDI-V115-F has been designed to maximize its performance in the near infrared region. Its sensitivity peak is centered at 1.15µm and extends to 0.86µm and 1.48µm. It also has very low dark current and fast recovery times, making it well suited for use in time-gated imaging. In addition, its high dynamic range provides good performance in a variety of conditions.

The principle of operation of the PDI-V115-F is based on the photoelectric effect, which states that incident visible or infrared light of sufficient energy is able to eject electrons from the photosensitive surface of the device. The released electrons generate a current through the applied electric bias. In this case, reverse bias is applied across the photosensitive surface, which further increases the current.

The PDI-V115-F is a versatile device that can be used in a variety of optical sensing applications. It is very sensitive to incident light, making it useful for low-level illumination applications. It is also fast enough to be used in time-resolved applications, such as night vision, surveillance, medical imaging, and other similar applications. Its large photosensitive area and high dynamic range make it well suited for imaging and other high-precision applications.

In summary, the PDI-V115-F is an infrared photodiode specifically designed for the near infrared region of the electromagnetic spectrum. It has a photosensitive area of 95 µm2 and is operated in reverse bias. Its peak sensitivity is centered at 1.15µm and extends to 0.86µm and 1.48µm. It has fast recovery times and a high dynamic range, making it well suited for applications where high accuracy and fast response times are required. These include night vision applications, medical imaging, and communications.

The specific data is subject to PDF, and the above content is for reference