PDV-V405-46

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Wavelength:	500nm
Color - Enhanced:	--
Spectral Range:	--
Diode Type:	PIN
Responsivity @ nm:	--
Response Time:	450ns
Voltage - DC Reverse (Vr) (Max):	75V
Current - Dark (Typ):	150pA
Active Area:	3.089mm²
Viewing Angle:	--
Operating Temperature:	-15°C ~ 70°C
Mounting Type:	Through Hole
Package / Case:	TO-46-2 Lens Top Metal Can

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Optical Sensors - Photodiodes

Photodiodes are light-sensitive semiconductors that convert light into electrical current. They are most commonly used in instrumentation, optical detectors, and medical diagnostic devices. In this article, we will discuss the application field and working principle of the PDV-V405-46 photodiode.The PDV-V405-46 photodiode is a reverse-biased p-n junction with a large diameter active area. It has high responsivity and fast response time, making it ideal for use in optical detectors and optical sensors. It has a peak responsivity of approximately 0.3 A/W at 405 nm and a spectral sensitivity range from 200 - 900 nm. It comes pre-mounted in a TO-18 can and is rated for 25 mA current.The PDV-V405-46 photodiode can be used in a variety of applications including optical communication systems, machine vision and surveillance systems, medical diagnosis and treatment systems, navigation systems, solar radiation measurement, and automotive lighting. Its fast response time makes it suitable for high speed applications such as spiking neural networks and time-of-flight sensors. In addition, the photodiode is well suited for applications requiring high reliability in harsh or extreme environments.As for the working principle of the PDV-V405-46 photodiode, it is based on the photoelectric effect. This effect states that when a photon is incident upon the photodiode, it can be absorbed by the semiconductor material. The electron-hole pair created by the photon then results in an electric current. The absorption of photons causes the current to increase, while not absorbing photons causes the current to decrease.The magnitude of the current is determined by the frequency of the photons and the area of the active region of the photodiode. As the wavelength of the photon increases, the rate of absorption decreases, and the current magnitude decreases. Consequently, the PDV-V405-46 photodiode has a peak responsivity of 0.3 A/W at 405 nm.In addition to the photoelectric effect, the PDV-V405-46 photodiode also works based on the principle of charge injection. This principle states that a reverse-biased p-n junction photodiode can inject electrons and holes into the junction temporarily. This charge injection causes an increase in the depletion layer thickness which produces a larger current flow. This charge injection mechanism is especially important for fast response times.In conclusion, the PDV-V405-46 photodiode is a reverse-biased p-n junction semiconductor device, suitable for applications such as optical communication systems, machine vision and surveillance systems, medical diagnosis and treatment systems, navigation systems, solar radiation measurement, and automotive lighting. It has a peak responsivity of 0.3 A/W at 405 nm, and a spectral sensitivity range from 200 - 900 nm. Its fast response time is due to a combination of the photoelectric effect and charge injection.

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