
S-24C32CI-T8T1U3 Integrated Circuits (ICs) |
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Allicdata Part #: | 1662-3193-2-ND |
Manufacturer Part#: |
S-24C32CI-T8T1U3 |
Price: | $ 0.18 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | ABLIC U.S.A. Inc. |
Short Description: | IC EEPROM 32K I2C 400KHZ 8TSSOP |
More Detail: | EEPROM Memory IC 32Kb (4K x 8) I²C 400kHz 900ns 8-... |
DataSheet: | ![]() |
Quantity: | 1000 |
4000 +: | $ 0.16044 |
8000 +: | $ 0.15688 |
12000 +: | $ 0.15416 |
28000 +: | $ 0.15051 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 32Kb (4K x 8) |
Clock Frequency: | 400kHz |
Write Cycle Time - Word, Page: | 5ms |
Access Time: | 900ns |
Memory Interface: | I²C |
Voltage - Supply: | 1.6 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
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The S-24C32CI-T8T1U3 is an memory device that is widely used in various applications. It is based on a special type of memory, called 3-2 memory, which is a non-volatile type of memory that stores data without the need for power. The S-24C32CI-T8T1U3 is an 8K-bit, three-wire EEPROM. It provides a large capacity of 8K bits in a very tiny physical package.
The S-24C32CI-T8T1U3 memory device can be used in a wide range of applications. It is used in consumer electronics, automotive, military, medical, and industrial applications. It is also used in network devices such as routers, switches, and firewalls. In addition, it is ideal for use in embedded systems, providing non-volatile storage for application parameter settings and low-level configuration settings.
The S-24C32CI-T8T1U3 is an 8K-bit, three-wire memory device. It has an on-chip address counter, which can be incremented or decremented on every WRITE or READ command, allowing it to access any location in the array. The S-24C32CI-T8T1U3 has two different write cycles, a WRITE cycle and a Quick WRITE cycle, which allows the user to program the memory quickly and easily. The S-24C32CI-T8T1U3 has a page size of 32 bytes and the entire memory can be written within two page write cycles. The S-24C32CI-T8T1U3 is also designed to be very low power, enabling it to be used in applications involving battery powered devices.
The S-24C32CI-T8T1U3 memory device is also equipped with an E2PROM write protection system that ensures that data can only be written to the device in specific areas. This is especially helpful for applications that require rigourous security and protection of data. The S-24C32CI-T8T1U3 also has built-in error detection and correction capabilities, which help ensure that data is not lost or corrupted in the memory. Finally, the S-24C32CI-T8T1U3 is designed to provide reliable operation in tough environment, making it an ideal choice for use in high speed and high temperature applications.
The S-24C32CI-T8T1U3 memory device is based on a type of non-volatile memory known as three-wire EEPROM. This memory works by storing data in small floating gate transistors that are connected to three wires. These three wires serve as an address, a data and an enable line. To access the memory, the user sends a signal on the address line which specifies the desired address. This signal is then sent down the data line, which contains the data that needs to be written to or read from the memory. Finally, the enable line is used to activate the write/read transistors.
Overall, the S-24C32CI-T8T1U3 memory device is a highly versatile and reliable memory device that can be used in a wide range of applications. With its 8K-bit capacity and three-wire EEPROM design, it provides high performance and low power operation, making it suitable for use in many different types of systems. In addition, its built-in error detection and correction capabilities, along with its E2PROM write-protection system, ensure that data is stored and retrieved with maximum accuracy and reliability. Thus, the S-24C32CI-T8T1U3 is an excellent choice for memory applications.
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