S-24CS16A0I-J8T1G Allicdata Electronics
Allicdata Part #:

S-24CS16A0I-J8T1G-ND

Manufacturer Part#:

S-24CS16A0I-J8T1G

Price: $ 0.78
Product Category:

Integrated Circuits (ICs)

Manufacturer: ABLIC U.S.A. Inc.
Short Description: IC EEPROM 16K I2C 400KHZ 8SOP
More Detail: EEPROM Memory IC 16Kb (2K x 8) I²C 400kHz 900ns 8-...
DataSheet: S-24CS16A0I-J8T1G datasheetS-24CS16A0I-J8T1G Datasheet/PDF
Quantity: 1000
2000 +: $ 0.70662
Stock 1000Can Ship Immediately
$ 0.78
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Not For New Designs
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Memory Interface: I²C
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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Application Field

The S-24CS16AOI-J8T1G is a memory component used in computing applications. It is an in-system programmable nonvolatile memory device manufactured by Seiko Instruments. The device is designed for use in embedded systems and is suitable for use in high temperature applications, such as automotive and industrial systems. It features a large memory capacity, providing up to 32K words of nonvolatile memory for data storage and is suitable for any application where data must be preserved over time. The device is designed for use with the SPI bus, a serial peripheral interface bus used to connect peripheral devices to microcontrollers and microprocessor-based systems. It is capable of operating with clock speeds up to 20 Mbps and can transfer data in 8-bit or 16-bit accesses. The device is also RoHS compliant, meaning it meets the Restriction of Hazardous Substances directive of the European Union. This means that the device does not contain any hazardous materials and is safe to use.

Working Principle

The working principle behind the S-24CS16AOI-J8T1G is based on Flash memory technology. The device is composed of a number of individual memory cells connected in a matrix. Each cell contains two transistors, one connected to each side of the memory cell. A floating gate dielectric layer is formed between the two transistors and a voltage applied to the cell can change the threshold voltage of the transistors, effectively storing data in each cell. When a program command is given, the device accesses the data stored in the memory cells and reads or writes it. When the device is not active, it enters a power-saving mode, reducing its current consumption. This makes the device ideal for low power applications.The device can also be protected from accidental erasure with a simple write protection command. This allows the device to be used safely in applications where data integrity is important, such as automotive and medical systems.In conclusion, the S-24CS16AOI-J8T1G memory component is a versatile and high-performance device suitable for use in a wide range of applications. Its high speed, large memory capacity, and RoHS compliance make it an attractive choice for embedded systems. Additionally, its low power consumption and write protection capabilities make it suitable for use in applications where data integrity is important.

The specific data is subject to PDF, and the above content is for reference

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