S-25C010A0I-I8T1U Integrated Circuits (ICs)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S-25C010A0I-I8T1U is a type of memory device that is often used in a variety of different applications. It is part of a family of nonvolatile memories known as Ferroelectric Random Access Memories (FRAM), a type of nonvolatile memory that combines the benefits of both RAM and Flash memory technologies.

FRAM memory technology is ideal for many applications that require the speed of RAM and the nonvolatility of Flash. This particular device has a low power consumption and is ideal for battery operated applications. It also offers data retention times of up to 10 years even at extreme voltages. This makes it ideal for applications that require a robust, long-term storage solution.

The S-25C010A0I-I8T1U is a 1-megabit nonvolatile memory block with a 16-byte page size. It is single supply read/write with 2.0V to 3.6V operation and built-in ECC and CRC capabilities to ensure the integrity of stored data. It is also constructed using Microchip’s advanced flash process technology to ensure high reliability.

The S-25C010A0I-I8T1U is a versatile device and can be used in a range of applications. It is often found in medical device, automotive and industrial automation applications for its robust nonvolatile memory capabilities. It is also widely used in IoT and embedded system applications for its low-power operation. It can also be used for data logging applications since it offers high durability and long retention times.

The working principle of the S-25C010A0I-I8T1U is simple. It utilizes an array of ferroelectric cells that can hold a charged or discharged state. Each cell has two possible values and is connected to access transistors, which together form the memory array. Reading and writing operations are performed by first selecting a page or row of ferroelectric cells and then accessing each bit within that page.

Writing data involves charging and discharging the ferroelectric cells according to the data being written. Reading involves sensing the amount of charge stored in the cells and translating the value of that charge into a bit. This process allows data to be stored in a nonvolatile and robust manner.

The S-25C010A0I-I8T1U is an extremely useful and versatile device for a variety of applications. It offers a low power consumption and a robust, long-term data storage solution. Its wide range of applications and ease of use make it an ideal choice for those looking for a reliable and efficient memory solution.

The specific data is subject to PDF, and the above content is for reference