S-93C46BR0I-J8T1U Allicdata Electronics

S-93C46BR0I-J8T1U Integrated Circuits (ICs)

Allicdata Part #:

1662-2079-2-ND

Manufacturer Part#:

S-93C46BR0I-J8T1U

Price: $ 0.18
Product Category:

Integrated Circuits (ICs)

Manufacturer: ABLIC U.S.A. Inc.
Short Description: IC EEPROM 1K SPI 2MHZ 8SOP
More Detail: EEPROM Memory IC 1Kb (64 x 16) SPI 2MHz 8-SOP
DataSheet: S-93C46BR0I-J8T1U datasheetS-93C46BR0I-J8T1U Datasheet/PDF
Quantity: 1000
4000 +: $ 0.15536
8000 +: $ 0.15192
12000 +: $ 0.14929
28000 +: $ 0.14574
Stock 1000Can Ship Immediately
$ 0.18
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 8ms
Memory Interface: SPI
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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The S-93C46BROI-J8T1U is a type of non-volatile memory, more commonly referred to as an FRAM ( Ferroelectric Random Access Memory ). FRAM memories are a type of non-volatile memory that offers unique advantages and uses compared to other memory technologies, such as EEPROM, SRAM and NOR Flash. FRAM can be used for a variety of applications, including data logging, code storage and execution, embedded system designs, automotive systems, communication systems and other applications.

Application Field

The S-93C46BROI-J8T1U offers a number of advantages that make it uniquely suitable for use in a range of applications. FRAM is non-volatile, meaning it does not require power for data to remain intact like other types of non-volatile memory do. This allows it to be used in applications that require frequent data writing, with data being stored even if power is removed. As an FRAM memory, the S-93C46BROI-J8T1U is also extremely fast compared to other non-volatile memory technologies, and is capable of writing data in a fraction of the time that other types of memory require. In addition, FRAM memory is highly resistant to environmental effects and perform reliably even in extreme temperatures, making it an ideal choice for automotive and other harsh-environment applications.

Working Principle

The working principle behind the S-93C46BROI-J8T1U is built around a ferroelectric material, usually PZT ( Lead Zirconate Titanate ). This material has the ability to store electrical charges, and when connected to a circuit, it can be used to store and recall bits of data. FRAM memory is built by creating several thousand capacitors, each of which is charged with a specific amount of energy corresponding to a particular bit of data stored in the memory. When connected to a power source and a circuit, the charged capacitors can be used to recall stored data through an electronic process known as read/write.

The S-93C46BROI-J8T1U is also capable of being programmed directly, which allows additional flexibility when implementing the memory in a system design. In direct programming, data is written directly to the memory in program mode, meaning that the data is written directly to the FRAM memory, instead of being written through a connection with a circuit. This type of programming is ideal for applications that require frequent data writes, and can be done quickly and securely, with no loss of data.

Conclusion

The S-93C46BROI-J8T1U is a type of non-volatile memory, specifically an FRAM ( Ferroelectric Random Access Memory ). This type of memory offers several advantages over other non-volatile memory technologies, including faster write times and greater environmental tolerance. It also has several unique features, such as the ability to be programmed directly, which makes it an attractive choice for applications that require frequent data writing.

The specific data is subject to PDF, and the above content is for reference

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