S-93C56BD0I-T8T1G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
Memory Type:	Non-Volatile
Memory Format:	EEPROM
Technology:	EEPROM
Memory Size:	2Kb (128 x 16)
Clock Frequency:	2MHz
Write Cycle Time - Word, Page:	8ms
Memory Interface:	SPI
Voltage - Supply:	1.8 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:	8-TSSOP

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Memory: S-93C56BD0I-T8T1G Application Field and Working Principle

The S-93C56BD0I-T8T1G is a high-performance, low power consumption memory device with very low power consumption. This product is a commonly used integrated circuit solution for a wide range of applications. It is the perfect choice for applications requiring high-speed access of large data sets. This memory device can be used in a variety of industries, including industrial control, telecommunications, banking, finance, and medical.

Application Fields of S-93C56BD0I-T8T1G Memory

The S-93C56BD0I-T8T1G memory has a wide range of applications in various industries. For instance, in the industrial control industry, it is used for reduce the storage need of large amount of data. In telecommunications applications, the device can be used for data storage and retrieving, helping processes to run faster. In the banking and finance industries, this type of memory can be used for storing records safely and securely. In the medical industry, the memory device can be used for patient records and other medical data.

Working Principle of S-93C56BD0I-T8T1G Memory

The S-93C56BD0I-T8T1G memory device has a few distinct features that make it stand out from other memory devices. This device utilizes a dual port memory system to increase the speed of the data access process and reduce power consumption. The device also features a standard node architecture to better support bus operations and reduce errors. Additionally, the device features a built-in power up and down protection function that ensures that data is not lost during the power off state. The device also incorporates error correction code (ECC) technology to detect and correct errors that may occur during data reads or writes. This technology is beneficial for applications that require extra reliability. Finally, the device also includes a CRC (Cyclic Redundancy Check) feature that provides extra protection against undesired data corruption.

Conclusion

The S-93C56BD0I-T8T1G memory is a powerful device that is ideal for various industries. Due to its various features, such as the dual port memory system, standard node architecture, power up and down protection, error correction code (ECC) technology and the cyclic redundancy check function, it offers improved access speed and better data protection. To sum up, the S-93C56BD0I-T8T1G memory is the perfect choice for applications that require high-speed access of large data sets and better reliability.

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