S-93L66AR0I-J8T1U Integrated Circuits (ICs)

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Introduction to S-93L66AR0I-J8T1U Memory

S-93L66AR0I-J8T1U is a type of Non-Volatile Static Random Access Memory (NVSRAM) developed by Samsung semiconductor. It is a low-power, high-speed memory device with a stylish metal package design. It offers multiple options including data rate, package size, and embedded peripherals. As a non-volatile memory device, it will retain the data stored even in the event of a power failure. It is designed for a range of applications such as industrial automation, consumer electronics and digital signage. This article will detail the application field and working principle of the S-93L66AR0I-J8T1U device.

Application Field

The S-93L66AR0I-J8T1U memory is suited for a variety of applications. Its high-speed and low-power performance make it a great choice for industrial automation systems. It can be used in process control, motion control and robotics applications. It is also suitable for consumer electronics, as well as digital signage such as kiosks and billboards. In these applications, it provides fast storage and processing of data in a smaller size package.

Working Principle

The S-93L66AR0I-J8T1U is a non-volatile, static random access memory (NVSRAM) device. It is a kind of flash memory that uses a non-volatile floating gate technology to store data. Unlike DRAM or SRAM, it does not require a constant power supply to retain data. It can store and read data without the need for periodic refreshes.

The S-93L66AR0I-J8T1U has two main components – a controller and a memory array. The memory array is composed of four columns of CELL array made up of 16M-bit cells, 8K row and 16 column address, and 64K bytes of Universal I/O data storage. The controller provides the control signals, address decoding and access timing for the device. It also implements read, write and Protect modes, so that all data can be stored and retrieved properly.

The S-93L66AR0I-J8T1U comes with a variety of features to ensure reliable operation. It includes a built-in Error-Correction-Code (ECC) mechanism, which can detect and correct up to 8-bit errors. The device is also protected from power supply failures and electrolytic leakage. In the event of a power failure, the embedded self-refresh circuit keeps the data intact for up to eight milliseconds.

Conclusion

The S-93L66AR0I-J8T1U is a non-volatile static random access memory (NVSRAM) developed by Samsung semiconductor. It is designed for a range of applications including industrial automation, consumer electronics and digital signage. This device features a low-power, high-speed design and its internal architecture includes a controller and a memory array. It also includes built-in features such as ECC and power failure protection, making it an ideal choice for a range of applications with high reliability requirements.

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