SEN02G64C4BG2SA-25WR

Series:	--
Part Status:	Obsolete
Memory Type:	DDR2 SDRAM
Memory Size:	2GB
Speed:	800MT/s
Package / Case:	200-SODIMM

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SEN02G64C4BG2SA-25WR Memory Modules Application Field and Working Principle

The SEN02G64C4BG2SA-25WR memory modules are important components of modern computer systems. From personal computers to servers and even embedded systems, these memory modules provide system memory and are becoming increasingly important as demand grows for faster and more efficient components.Memory modules are usually built from one or more integrated circuits (ICs). The two major types of ICs used in memory modules are Dynamic Random Access Memory (DRAM) and Static Random Access Memory (SRAM). Both of these technologies are based on transistors, but are designed differently to achieve very different performance metrics. DRAM is widely used in mobile and desktop applications, while SRAM is reserved for high-end applications.The SEN02G64C4BG2SA-25WR is a DDR4 memory module featuring DRAM technology. DDR4 stands for Double Data Rate 4, and is currently the fourth generation of DRAM from JEDEC, the Joint Electron Device Engineering Council. It consists of four memory components with a 305-pin electrical socket for easy integration within an embedded system. The memory is organized in 4x4-bit word sections and provides up to 32GB of memory.The application field of the SEN02G64C4BG2SA-25WR includes embedded systems, personal computers, servers and telecommunications equipment. It is highly suitable for applications that require increased memory capacity such as video streaming, machine learning and security systems. Additionally, the module features a low power consumption of just 25W and supports high-speed data rates up to 3200Mbps in each direction.The working principle of the SEN02G64C4BG2SA-25WR memory modules is based on DRAM technology. The module contains four memory cells where each memory cell contains transistors, capacitors and other components. When a memory location is requested, a control signal is sent to the corresponding memory cell, which then activates the transistors to allow current to flow. This current charges or discharges the capacitors, changing the state of the memory cells and allowing for the data to be read or written.This process is repeated for each memory request and performs a new read or write operation with each request. The memory cells are then returned to the standby mode, and the data is retained until the next request. The effective data access time of this module is very fast with a performance of up to 1.2ns making it suitable for high speed applications.The advanced architecture of the SEN02G64C4BG2SA-25WR also supports error correction with its ECC (Error-Correcting Code) feature. This feature is designed to detect and correct any irregularities in the data that is being transferred to the memory. This ensures data integrity and prevents any data corruption due to transmission errors.In summary, the SEN02G64C4BG2SA-25WR is a highly reliable and efficient memory module, which is suitable for use in a wide range of computers and embedded systems. With its high data access speed, low power consumption and advanced error-correcting feature, it provides superior performance and enhanced data integrity, making it an ideal choice for modern computing applications.

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