SFH 309 FA-4 RN18A

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SFH 309 FA-4 RN18A is an optical sensor from the family of phototransistors. It is a light-to-open type of sensor that is typically used for detection of light and other objects. Phototransistors are optically coupled devices that sense the presence of light and convert the light energy into electrical energy, which can then be used as an input signal for a variety of applications.

The SFH 309 FA-4 RN18A phototransistor consists of a gallium arsenide infrared LED with an active area of 4 mm2 surrounded by four LED chips which are positioned at 45 degree angles relative to each other. The LED emits light with a wavelength of 880 nm which is amplified by the four LED chips and emitted as an infrared beam. When the beam is interrupted by an object, the LED chips detect the decrease in light intensity and this actuates the switching of the phototransistor.

The SFH 309 FA-4 RN18A phototransistor is typically used for detection of objects or items moving in a straight line. The device is designed to sense the presence of an object, and to react instantaneously to changes in position or velocity. The device is also designed to be extremely sensitive and to have a very low response time. Tests have shown that the SFH 309 FA-4 RN18A phototransistor can detect objects moving at a speed of up to 68 kilometers per hour.

The SFH 309 FA-4 RN18A phototransistor can be used in a variety of applications including object detection, motion sensing, and other applications where changes in light intensity need to be detected. Some of the more common applications of the SFH 309 FA-4 RN18A phototransistor include motion sensing in robotics, alarm systems, and inventory management, as well as machine vision systems. The device can also be used as part of an overall home automation system.

The working principle of the SFH 309 FA-4 RN18A phototransistor is based on the principle of the photoelectric effect. This effect occurs when light is absorbed by a semiconductor material, causing electrons to move from the material\'s valence band to its conduction band. The increased number of electrons in the conduction band will create a small current which can be measured and converted to an electrical signal. This signal can then be used to activate the phototransistor, allowing it to detect changes in light intensity.

The SFH 309 FA-4 RN18A phototransistor is an optically coupled device that is simple to install and provides a reliable and fast response time. Its sensitivity and quick response time make it ideal for applications where changes in light intensity need to be detected quickly and accurately, making it an important device for applications such as object and motion detection.

The specific data is subject to PDF, and the above content is for reference