SIT8008ACB3-30E

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Programmable Oscillators

Programmable oscillators are versatile devices that offer stability and accuracy in oscillation frequency. Among them, the SIT8008ACB3-30E PECVD System is gaining attention as a reliable and efficient product suitable for a wide range of applications. This article will discuss the application field and working principles of SIT8008ACB3-30E.

Application Field

SIT8008ACB3-30E PECVD System is used for various thin film deposition processes, such as silicon thin film deposition, where large surface area thin film deposition is required. It is suitable for a wide range of materials, including silicon wafers and other substrates. The deposition process is suitable for semiconductor device fabrication, chemical sensing and temperature sensing applications. It is also used in many other industries such as chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD).

The application field of SIT8008ACB3-30E PECVD System is very comprehensive and can be further divided into two main categories: chemical vapor deposition (CVD) and physical vapor deposition (PVD). In CVD, the thin film deposition is obtained by decomposing a gas at a heated surface. The PVD process involves bombardment of a substrate with energetic ions. With this method, thin films of different materials can be formed on a substrate.

Working Principle

SIT8008ACB3-30E PECVD System works using a method called plasma enhanced chemical vapor deposition. In this process, a gas mixture of precursor gases is sent inside the PECVD chamber, where the gas is then excited by an RF source, resulting in the formation of a plasma. This plasma is then used to etch the surface of the substrate, causing the precursor gas molecules to bond to the substrate surface, thus forming a thin film.

The plasma is created using a Radio Frequency (RF) source, powered by a power supply. This power supply is adjustable and can be adjusted to different frequencies, allowing the user to optimise the conditions used for the deposition process. The plasma is then maintained in the gas chamber by a gas circulated to ensure a constant flow of reactants.

Once the thin film has been deposited, it can then be subsequently heat treated in order to strengthen the film. This is commonly done by exposing the substrate to ultraviolet light or by heating it up to elevated temperatures in order to activate the reactive precursor molecules. It is possible to adjust the roughness of the thin film by changing the duration of exposure.

Conclusion

SIT8008ACB3-30E PECVD System is a versatile product suitable for a wide range of applications. It works using the plasma enhanced chemical vapor deposition (PECVD) method, in which a gas mixture of precursor gases is sent inside the chamber and excited by an RF source, resulting in the formation of a plasma. With this method, thin films of different materials can be formed on a substrate. Moreover, the thin film can be further strengthened by heat treatment.

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