SIT8208AI-81-28E-12.800000T

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Oscillators are electronic components used to generate unprompted signals of alternate electrical current or voltage at a certain frequency. Generally, oscillators are classified into two types according to the structures - LC (inductance-capacitance) and RC (resistance-capacitance). SIT8208AI-81-28E-12.800000T belongs to the RC type oscillators.

The application fields of SIT8208AI-81-28E-12.800000T include radio frequency (RF) and wireless communication. This oscillator is widely used in Wi-Fi routers, 4G/5G base stations, cellphone base stations and other wireless networking equipment for high-frequency signals generation.

The working principle of SIT8208AI-81-28E-12.800000T is based on the negative resistance phenomenon of tunnel diode. The integrated circuit (IC) used in the oscillator consists of a tunnel diode and a transistor to form a two stage amplifier. The tunnel diode is subjected to a capacitive-inductive load at the output, so that the output voltage across the load generates a high frequency oscillating wave. The frequency of rotating wave is determined by the size of capacitive-inductive load.

The oscillating signal generated by SIT8208AI-81-28E-12.800000T is further amplified by the transistor in the IC. The output waveform of this oscillator is sinusoidal. Usually, SIT8208AI-81-28E-12.800000T has a center operating frequency of 12.800000 GHz and a frequency stability of ±100ppm over the operating temperature range of -40°C to 85°C.

SIT8208AI-81-28E-12.800000T also features a high output power of +9 dBm which helps to reduce the complexity of the external power amplifier. In addition, this oscillator has a low power consumption of 9V @200mA. This makes SIT8208AI-81-28E-12.800000T ideal for applications which require low power consumption and high power output. The lightweight of this oscillator also makes it perfect for portable devices.

In summary, SIT8208AI-81-28E-12.800000T has a wide range of applications including radio frequency, wireless communication, Wi-Fi routers, 4G/5G base stations, and cellphone base stations. This oscillator works based on the negative resistance phenomenon of tunnel diode and has a center operating frequency of 12.800000 GHz and a frequency stability of ±100ppm. It is also distinguished by its high output power and low power consumption, making it an ideal choice for portable devices.

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