SST25PF080B-80-4C-S2AE-T

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SST25PF080B-80-4C-S2AE-T is a high speed, non-volatile SPI Flash memory product noted for its versatile set of features. This device is among the simplest to incorporate into a design, due to its small package size and low power consumption. It is capable of supporting a variety of applications, with a 3.3V operating voltage and a maximum speed of 20 Mhz. Additionally, the device has a wide range of array densities ranging from 128 Kbits to 8 Mbits.

The SST25PF080B-80-4C-S2AE-T is optimized for use in applications such as handheld gaming, automotive electronics, home appliances, security systems, industrial automation, and cellular phones. It is an ideal choice for applications such as digital video recording, data logging and data persistance, due to its low power consumption and reliability. It is also suitable for other applications such as data storage, use in embedded systems, and for storing data in the cloud due to its wide array of densities.

SST25PF080B-80-4C-S2AE-T is composed of a 4K-Byte array of non-volatile memory cells. The cells in the Flash Memories are programmed using both source and/or gate erase techniques, with the cell’s source quickly reaching the highest voltage necessary to program the memory cell without damage. The memory cells are accessible in a serial interface mode, either via a 3-wire SPI or a 4-wire SPI port. The memory cell can be read directly, without the need of an erase cycle, in either page or continuous read mode.

The device features command-based generic access protocol, allowing a single instruction to “read” or “write” the memory cells. The SPI commands are defined as “read”, “write”, “page program”, “erase” and “enable / disable chip select”. It also supports Auto Address Increment (AAI) modes for write and erase operations, allowing the user to reduce the number of SPI commands required to perform the desired operation.

The SST25PF080B-80-4C-S2AE-T is designed for robust operation, featuring a wide operating temperature range, low power consumption, endurance of up to 10,000 cycles, and data retention of up to 10 years. The device utilizes a high-current HV P-Channel MOSFET structure to ensure reliable programming and erasing of the memory cells. In addition, the device also includes a dierential HV boost circuit, as well as a unique double layer oxide/nitride/ oxide (ONO) stack, both of which help to ensure that the programmer voltage needed to program the memory cells is consistently supplied across the memory array. These features, together with the integrated ECC (error correction code) support, ensure that the SST25PF080B-80-4C-S2AE-T Flash Memory delivers reliable and robust operation, making it an excellent choice for embedded applications requiring exceptional memory performance.

The specific data is subject to PDF, and the above content is for reference