SST25VF032B-80-4I-QAE

Series:	SST25
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	32Mb (4M x 8)
Clock Frequency:	80MHz
Write Cycle Time - Word, Page:	10µs
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	8-WSON
Base Part Number:	SST25VF032B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction of SST25VF032B-80-4I-QAE MemoryThe SST25VF032B-80-4I-QAE memory is a type of non-volatile, serial flash memory. It is a 256K x 8bit 12V single supply serial flash memory. It is designed for a wide range of applications and is an ideal solution for small microcontrollers to store large amounts of information. The chip is built on a 0.7mm pitch (2x3 mm), and is composed of a 30 um CMOS processes. Application Field of SST25VF032B-80-4I-QAE MemoryDue to its wide range of features and its medium capacity, the SST25VF032B-80-4I-QAE memory is ideal for a variety of applications including consumer electronics, industrial control, automotive, PC BIOS and medical applications. The SST25VF032B-80-4I-QAE memory also has strong ESD protection and offers excellent reliability in harsh environmental conditions. This makes it suitable for use in extreme environmental conditions such as medical and automotive applications. The SST25VF032B-80-4I-QAE memory is also commonly used in industrial control applications because of its low power consumption and its fast write and erase speeds. Its high storage capacity and fast read operations make it ideal for storing large amounts of data such as program code or firmware updates. Working Principle of SST25VF032B-80-4I-QAE MemoryThe SST25VF032B-80-4I-QAE memory is based on a single-transistor memory cell, which is located between the source and drain of the channel. The channel is formed by overlapping the source and drain regions of the transistor, which creates an electrical field. When an electric field is applied, the channel of the transistor becomes conductive, and data can be read directly from the channel. Data is written to the SST25VF032B-80-4I-QAE memory by applying a current pulse, which selectively alters the conductivity of the channel. This can be done with a current pulse, or by applying an applied voltage to write bits directly. Data can also be written in programming operations by erasing and rewriting a single block or the entire memory. The SST25VF032B-80-4I-QAE memory is also equipped with an array of 64Kbit, or 8K bytes of block erase protection. This allows the memory to be protected against accidental erasure of the entire memory. It also allows for erasing of individual data blocks, allowing for more secure data storage. ConclusionThe SST25VF032B-80-4I-QAE memory is a versatile, cost effective, and reliable memory solution. It is an ideal choice for applications requiring large amounts of data storage, and for applications that require robust protection from catastrophic memory erasure due to power surges or accidental write operations. Its power consumption is low, and it offers excellent reliability and operation in harsh environmental conditions.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description