SST25VF080B-80-4C-QAE-T

Series:	SST25
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	8Mb (1M x 8)
Clock Frequency:	80MHz
Write Cycle Time - Word, Page:	10µs
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	8-WSON
Base Part Number:	SST25VF080B

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Introduction to SST25VF080B-80-4C-QAE-T MemorySST25VF080B-80-4C-QAE-T memory (hereafter referred to as “the memory”), is a 8 Mbit, single voltage Flash Memory component. It has an industry standard SOIC-8 package and is an ideal memory component for modern electronic circuit applications. It is made by Silicon Storage Technology (SST).Application FieldThe SST25VF080B-80-4C-QAE-T memory is mainly used for microcontroller embedded systems, as it provides a compact 8 Mbit Flash memory component. It can be used for short programs, for storage of configuration information and for holding firmware for execution. It is also popular for consumer applications, such as digital cameras and music players, as it can be easily integrated into the system.Working PrincipleThe working principle of the SST25VF080B-80-4C-QAE-T memory is based on storing information using a few transistors and capacitors. This is done by using a floating gate, which is inside the memory component and allows information to be programmed into the memory at a designated location. It is also used to control the erasing process of the memory.The memory has a sector architecture, which allows the memory to be divided into blocks and sectors, which can then be individually managed. An erase block contains multiple bytes, while a sector contains multiple blocks. This allows the user to select different blocks and sectors to read and write.The memory can be programmed and erased in different ways, depending on the user’s needs. It can be done in-system and also supports flash programming, which allows for much faster programming. The memory also has an on-chip auto-decode circuitry, which maps the memory to linear address space, making programming and erasing of memory locations much easier.The memory also has built-in error correcting code (ECC) to detect and correct errors. This can lead to higher data integrity, as any errors that occur due to the environment or conditions, can be automatically detected and corrected, which helps reduce data loss.PerformanceThe memory has a high performance in terms of speed, read/write cycles and power consumption. It has a fast access time of 20 ns and a write cycle of 10 us. It is rated to provide up to 100,000 cycles of endurance. It also has low power consumption, drawing just 2.7 mA of active power and 0.9mA of standby power at 3.3V supply voltage.ConclusionThe SST25VF080B-80-4C-QAE-T memory component is an ideal choice for use in modern electronic circuit designs. It has a fast access time, a high endurance, a low power consumption, a sector architecture and built-in ECC support. This makes it a perfect choice for any application that needs a reliable and high-performance memory component.

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