SST25VF080B-80-4C-S2AE-T Allicdata Electronics
Allicdata Part #:

SST25VF080B-80-4C-S2AE-T-ND

Manufacturer Part#:

SST25VF080B-80-4C-S2AE-T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC FLASH 8M SPI 80MHZ 8SOIC
More Detail: FLASH Memory IC 8Mb (1M x 8) SPI 80MHz 8-SOIC
DataSheet: SST25VF080B-80-4C-S2AE-T datasheetSST25VF080B-80-4C-S2AE-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: SST25
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (1M x 8)
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 10µs
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SST25VF080B
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SST25VF080B-80-4C-S2AE-T is a Memory device that is commonly used in a wide range of industries and applications. The device is characterized by a superior speed and capacity, making it an excellent choice for large-scale data storage solutions. Additionally, it comes with a small footprint, meaning it does not take up much space.

The SST25VF080B-80-4C-S2AE-T Memory consists of a non-volatile Flash memory array, which utilizes an advanced charge-pump circuit to allow higher voltage levels during programming. This design feature allows the memory to store data without the need for external power, resulting in no additional energy cost or risk of data loss.

The device is also designed with industry-leading manufacturing processes, which help to improve its performance and reliability. The device is designed with a single eight-bit memory cell, making it easy to read, write and erase data out of the memory. It also has an extremely low power consumption and is capable of operating over a wide range of temperatures.

As for its working principle, the SST25VF080B-80-4C-S2AE-T Memory utilizes a multi-level cell structure to store data. This means that each cell is capable of storing more than one bit of information, resulting in increased capacity and faster memory access. Additionally, the arrangement of memory cells allows for efficient data transfer, resulting in improved speeds and reduced power usage.

The SST25VF080B-80-4C-S2AE-T Memory can be used in a variety of applications, including automotive, IoT, medical, industrial and consumer electronics applications. It is also suitable for applications that require high speed, superior reliability, and low power consumption. Additionally, the device supports fast, reliable and secure data transfer, making it a great choice for applications that require large amounts of data to be securely stored.

Overall, the SST25VF080B-80-4C-S2AE-T Memory is an excellent option for a variety of industries and applications due to its superior speed and capacity, low power consumption, and secure data transfer capabilities. This powerful Memory device is designed with robust manufacturing processes to ensure reliable performance and energy efficiency.

The specific data is subject to PDF, and the above content is for reference

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