START499D Allicdata Electronics
Allicdata Part #:

497-8804-2-ND

Manufacturer Part#:

START499D

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS RF NPN 4.5V 1A SOT-89
More Detail: RF Transistor NPN 4.5V 1A 1.7W Surface Mount SOT-...
DataSheet: START499D datasheetSTART499D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 4.5V
Frequency - Transition: --
Noise Figure (dB Typ @ f): --
Gain: 13dB ~ 14dB
Power - Max: 1.7W
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 160mA, 3V
Current - Collector (Ic) (Max): 1A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89
Base Part Number: START499
Description

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Introduction:

The START499D is a type of specialized RF semiconductor device, which is a bipolar junction transistor (BJT). It is specifically designed as an RF power amplifier and has unique characteristics that set it apart from other bipolar transistors. These properties provide it with high performance and reliability in all kinds of radio frequency applications. As such, it can be used in a variety of applications ranging from broadcasts to mobile, wireless and industrial process control.

Application Field and Working Principle:

The START499D has a wide range of applications, including radiofrequency power amplifiers, radio communications, radar systems and other systems operating at radio frequencies. The device is designed to amplify high-frequency signals and is used in a wide variety of wireless applications ranging from FM and AM broadcast transmitters to mobile and wireless communication base stations. Its main applications are in amateur radio and commercial broadcasting. As such, it can be used to increase the power of a signal before it is transmitted.

The working principle of the START499D is to use one semiconductor junction to control the current flow between two higher and lower current conduction regions, which are usually formed between a base and collector terminal. Due to the broadband gain characteristic of the device, the START499D is able to amplify signals over a wide range of frequencies up to 500 MHz. Additionally, the device can also be used as a linear or Class AB amplifier, depending on the application.

In order to increase the output power, the START499D can be used in a variety of configurations, such as Class AB or Class C amplifiers. Additionally, the device can also be used in a hybrid (balanced) amplifier configuration. This is possible because of the bipolar characteristics of the device and its broadband gain characteristic. The device can also be used as a linear amplifier, which is ideal for applications where a low level of distortion is desired.

The START499D also offers excellent linearity, making it suitable for applications such as base-station transmitters with a single adjustment for power output. Its linearity also makes it suitable for amplifying SSB and FM signals. The device can also be used as an amplifier for video signals due to its low noise figure and excellent stability across a wide range of operating frequencies.

In summary, the START499D is a specialized bipolar transistor designed for use in RF applications features a wide range of capabilities, making it suitable for a variety of purposes. Its base-emitter voltage, collector voltage, and output power can be adjusted to suit the application. Additionally, its linearity makes it suitable for use in a variety of applications, including broadcast, mobile, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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