TB-57.849MBD-T Allicdata Electronics
Allicdata Part #:

887-2185-2-ND

Manufacturer Part#:

TB-57.849MBD-T

Price: $ 0.00
Product Category:

Crystals, Oscillators, Resonators

Manufacturer: TXC Corporation
Short Description: OSC MEMS 57.849MHZ CMOS SMD
More Detail: 57.849MHz XO (Standard) CMOS Oscillator 3.3V Enabl...
DataSheet: TB-57.849MBD-T datasheetTB-57.849MBD-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Frequency Stability: ±25ppm
Current - Supply (Disable) (Max): --
Height - Seated (Max): 0.032" (0.80mm)
Size / Dimension: 0.197" L x 0.126" W (5.00mm x 3.20mm)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Ratings: --
Current - Supply (Max): 25mA
Operating Temperature: -40°C ~ 85°C
Series: TB
Voltage - Supply: 3.3V
Output: CMOS
Function: Enable/Disable
Frequency: 57.849MHz
Type: XO (Standard)
Base Resonator: MEMS
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The TB-57.849MBD-T is an oscillator produced by the TB family. It is designed for a range of oscillation applications and is designed to work on a range of frequencies, making it suitable for different electronic applications. This oscillator is mainly used in the construction of cell-phones and other portable electronic products.

The oscillator is based on the principle of RF signal generation through a two-stage bipolar transistor amplifier. The amplifier uses an oscillator circuit and the output signal is then amplified by a tailored transistor. This type of oscillator is mainly used for linear voltage regulator applications and the oscillator is designed to handle a wide range of voltage levels. The oscillator is also designed to be low noise, which is important for the successful operation of the device.

The TB-57.849MBD-T oscillator is an ideal device for applications where the oscillator must generate a wide range of frequencies. The device is designed with a low profile and a small footprint, making it suitable for applications where size is a concern. It is also designed to provide a low noise output signal and has a wide range of frequency response, from 5kHz to 1000MHz.

The working principle of the TB-57.849MBD-T is based on the principle of RF signal generation through a two-stage bipolar transistor amplifier. The oscillator circuit is first designed to produce an oscillating signal and then the output is amplified through the tailored transistor. The output of the oscillator is then further amplified by the amplifying transistor. The amount of amplification is determined by the frequency of the oscillating signal and the operating voltage of the transistor. The result is an amplified signal of a certain frequency.

The TB-57.849MBD-T is mainly used in applications such as frequency synthesizing, cellular radio systems, and RF communications equipment. It is designed to provide low noise performance and a wide range of frequency response. The device is also designed to work with a wide range of voltage levels and is suitable for linear voltage regulator applications. In addition, the device is designed to operate over a wide temperature range, making it suitable for use in a variety of environments.

The TB-57.849MBD-T is a highly reliable and effective device for applications where the generation of a wide range of frequencies is required. The device is designed with a low profile and a small footprint, making it suitable for applications where size is a concern. It is also designed to provide a low noise output signal and has a wide range of frequency response. The device is also designed to operate over a wide temperature range, making it suitable for use in a variety of environments.

The specific data is subject to PDF, and the above content is for reference

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