TD-33.000MBD-T Allicdata Electronics
Allicdata Part #:

887-2317-2-ND

Manufacturer Part#:

TD-33.000MBD-T

Price: $ 0.00
Product Category:

Crystals, Oscillators, Resonators

Manufacturer: TXC Corporation
Short Description: OSC MEMS 33.000MHZ CMOS SMD
More Detail: 33MHz XO (Standard) CMOS Oscillator 3.3V Enable/Di...
DataSheet: TD-33.000MBD-T datasheetTD-33.000MBD-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Frequency Stability: ±25ppm
Current - Supply (Disable) (Max): --
Height - Seated (Max): 0.032" (0.80mm)
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Ratings: --
Current - Supply (Max): 25mA
Operating Temperature: -40°C ~ 85°C
Series: TD
Voltage - Supply: 3.3V
Output: CMOS
Function: Enable/Disable
Frequency: 33MHz
Type: XO (Standard)
Base Resonator: MEMS
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Oscillators - TD-33.000MBD-T Application Field and Working Principle

The TD-33.000MBD-T is a high-precision reference oscillator that uses advanced technology to provide the highest level of performance available in the field of oscillators. The oscillator is designed for applications in a wide variety of high-freqency, low-voltage oscillators. The working principle of the oscillator is based on a Silicon Carbide MEMS (Micro-electromechanical) structure, which provides superior frequency stability and accuracy.

The oscillator has a wide range of applications, including applications in the optical telecommunications industry, the electrical engineering industry, and the semiconductor industry. In optical telecommunications, the oscillator can be used in high-speed phase-locked loops (PLLs), frequency division multiplexing (FDM), and time division multiplexing (TDM) circuits. In electrical engineering, the oscillator is used for various types of time-division multiplexing (TDM), frequency-division multiplexing (FDM), and cross-point switching applications. In the semiconductor industry, the oscillator can be used to control power efficiency and high-frequency operation.

MEMS Structure

The TD-33.000MBD-T oscillator is based on a MEMS (Micro-electromechanical) structure that is made up of two Silicon Carbide (SiC) layers that act as the active part of the oscillator. The two layers are held in place with an inter-layer insulation. The top layer is made up of two parallel plates with a gap between them that serves as the frequency control element. The bottom layer is made up of multiple interconnected SiC layers, which act as the passive component of the oscillator. This combination of components provides an accurate and stable frequency output.

Frequency Control

The frequency of the TD-33.000MBD-T oscillator can be adjusted by changing the gap between the two plates in the top layer. This is done by using a pressure-sensitive material to control the gap. When the gap is decreased, the frequency is increased, and when the gap is increased, the frequency is decreased. This process is known as frequency control.

Pulse-width Modulation (PWM)

The frequency of the TD-33.000MBD-T oscillator can also be adjusted through pulse-width modulation (PWM). This is a technique that uses a digital signal to control the frequency of the oscillator. The signal is sent to the oscillator and the frequency is adjusted by changing the ratio of pulses per unit time. The higher the frequency, the shorter the pulse width.

Frequency Jitter

The TD-33.000MBD-T oscillator also has a frequency jitter control feature. This is used to reduce the amount of noise generated by the oscillator. The frequency jitter is adjusted by changing the length of the pulse width. If the pulse width is decreased, the jitter is increased. The frequency jitter can be adjusted to very low values, which can be advantageous in applications where a high level of accuracy and stability are required.

Conclusion

The TD-33.000MBD-T oscillator is a high-precision reference oscillator that can be used in a variety of applications. It is based on a Silicon Carbide MEMS (Micro-electromechanical) structure, which provides superior frequency stability and accuracy. The oscillator also has a wide range of frequency control options, including frequency adjustment through gap size and pulse-width modulation (PWM). The oscillator also has a frequency jitter control feature that can be used to reduce noise generation.

The specific data is subject to PDF, and the above content is for reference

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