VS-100MT060WSP

Series:	--
Part Status:	Active
IGBT Type:	--
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	107A
Power - Max:	403W
Vce(on) (Max) @ Vge, Ic:	2.49V @ 15V, 60A
Current - Collector Cutoff (Max):	100µA
Input Capacitance (Cies) @ Vce:	9.5nF @ 30V
Input:	Single Phase Bridge Rectifier
NTC Thermistor:	Yes
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	12-MTP Module
Supplier Device Package:	MTP

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VS-100MT060WSP Application Field and Working Principle Transistors are commonly used electronic components because of their versatility. They are used in almost every electronic device, from personal computers to car stereos. In particular, IGBTs, or insulated-gate bipolar transistors, are extremely popular because of their high current capacity, low power dissipation, and fast switching speeds. To further enhance their capabilities, IGBTs can be packaged together in modular form, just like VS-100MT060WSP. VS-100MT060WSP is a module with two IGBTs in series. The module has a rated current rating of 100A and a rated collector-emitter voltage of 600V. It also has a reverse recovery time of 2.2uS. This type of module is used in various applications, ranging from power supplies to motor controllers, and can provide both a strong and reliable connection for circuits. IGBTs, unlike conventional transistors, provide better performance by taking the best of both bipolar junction transistors (BJTs) and MOSFETs. That is, it combines the low gate voltage of MOSFETs with the high current capacity of BJTs. This is possible because IGBTs are composed of four layers. The bottom layer is the emitter, followed by a thin layer of insulation between the emitter and the base. Above the insulation is the base and finally, the collector. Depending on the type of IGBT, this sequence can be switched with the collector on the bottom and the emitter on the top. When the gate voltage of an IGBT exceeds the forward voltage of the thin insulation layer, current flows from the emitter to the collector via the base. This turns the IGBT on, allowing current to flow through the transistor. When the gate voltage drops below the forward voltage, the IGBT is off and no current flows through it. In this way, IGBTs can easily be switched on and off. The VS-100MT060WSP module is a perfect example of this. Since it is composed of two IGBTs in series, it can be used to control large amounts of power with precision. This makes it well-suited for applications such as motor controllers, inverters, and switch-mode power supplies. In conclusion, the VS-100MT060WSP module is a practical and reliable way to control large amounts of power. With its two IGBTs in series, it can provide a strong and reliable connection for circuits. It is well-suited for applications such as motor controllers, inverters, and switch-mode power supplies. With its high current capacity, low power dissipation, and fast switching speeds, the VS-100MT060WSP module provides an optimal solution for many applications.

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