VS-20MT120UFAPBF Allicdata Electronics
Allicdata Part #:

VS-20MT120UFAPBF-ND

Manufacturer Part#:

VS-20MT120UFAPBF

Price: $ 40.17
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT 1200V 20A 240W MTP
More Detail: IGBT Module NPT Full Bridge Inverter 1200V 20A 240...
DataSheet: VS-20MT120UFAPBF datasheetVS-20MT120UFAPBF Datasheet/PDF
Quantity: 1000
105 +: $ 36.50790
Stock 1000Can Ship Immediately
$ 40.17
Specifications
Series: --
Part Status: Active
IGBT Type: NPT
Configuration: Full Bridge Inverter
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 20A
Power - Max: 240W
Vce(on) (Max) @ Vge, Ic: 4.66V @ 15V, 40A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.79nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 16-MTP Module
Supplier Device Package: MTP
Description

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VS-20MT120UFAPBF Application Field and Working Principle

VS-20MT120UFAPBF is a product from the Mitsubishi Electric Power Devices family and falls under their Insulated Gate Bipolar Transistor (IGBT) modules category. It is known for its low on-state resistance and low saturation. The product has been designed as an easy-to-use solution to modern and efficient power conversion needs. The VS-20MT120UFAPBF is an acceptable solution for both commercial and industrial applications.The product has two separate characteristics and these both converge together to give a seamless, efficient and effective product. The two traits are its low on-state resistance and its low saturation. The resulting combination gives the product the ability to offer a significant boost in the power efficiency of the system it is installed into. This, in turn, results in reduced electricity consumption and increased longevity of the device itself. The low on-state resistance of the product is derived from its doped silicon construction. This, in turn, allows for lower electrical resistance across the transistor during operation. This decreased resistance, in turn, allows for a much higher energy efficiency when compared with other standard transistors. The low saturation capability of the product is derived from its ability to carry an increased current density as a result of its superior cooling system. This, in turn, allows a higher current to flow through the device and can even reduce the amount of strain on the device itself, further boosting its endurance.This incredible combination of factors gives the product a great degree of operability, which makes it an attractive choice for many power conversion applications. The VS-20MT120UFAPBF is popular among engineers for the wide range of applications it can be placed in. Some of these applications include rail locomotives, solar inverters, wind turbines and robotics. The VS-20MT120UFAPBF boasts a number of features that make it a great fit for many modern power conversion needs. Firstly, the product has a peak colling temperature of 150°C and has a high failure mode rating of 25mΩ at 10V. This allows for a much higher resistance to failure and an increased lifetime of the product. Secondly, the product offers an impressive peak voltage of 1200V and an IGBT current rating of 20A. This increase in voltage and current ratings allows for high powered systems to be powered by the device.The working principles of the VS-20MT120UFAPBF can be seen via close examination of its internal workings. The product is composed of four separate silicon chips which are connected in series. Each of these chips is then connected to two separate terminals and form the heart of the product. These two terminals are responsible for the two separate characteristics of the product that were outlined previously. The first terminal provides the low on-state resistance that we have discussed previously. The second terminal is responsible for providing the low saturation capability of the product. This terminal is connected in such a way that when current is applied to it, the device can exist in a “low-saturation” state in which the current can flow more freely and efficiently when compared with other transistors.In conclusion, the VS-20MT120UFAPBF is a unique and efficient IGBT module from the Mitsubishi Electric Power Devices family. It offers an incredible combination of low on-state resistance and low saturation characteristics that strongly recommend it for use in power conversion applications. Its wide range of features and its versatile applicability to a number of contexts make the product a highly attractive choice for many engineers.

The specific data is subject to PDF, and the above content is for reference

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