Allicdata Part #: | VS-40MT120UHAPBF-ND |
Manufacturer Part#: |
VS-40MT120UHAPBF |
Price: | $ 75.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 1200V 80A 463W MTP |
More Detail: | IGBT Module NPT Half Bridge 1200V 80A 463W Chassis... |
DataSheet: | VS-40MT120UHAPBF Datasheet/PDF |
Quantity: | 76 |
1 +: | $ 68.63220 |
10 +: | $ 65.09160 |
25 +: | $ 63.32070 |
100 +: | $ 59.04010 |
Series: | -- |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 80A |
Power - Max: | 463W |
Vce(on) (Max) @ Vge, Ic: | 4.91V @ 15V, 80A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 8.28nF @ 30V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 12-MTP Module |
Supplier Device Package: | MTP |
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VS-40MT120UHAPBF is an advanced high-voltage insulated gate bipolar transistor module designed for motor control. Named for the increasing size and current handling capacity, the VS-40MT120UHAPBF is one of the first of its kind with a proven ability to operate in harsh conditions.The insulated gate bipolar transistor (IGBT) is a three-terminal power semiconductor device typically used as an electronic switch to control electric power. It features a combination of both bipolar junction transistor (BJT) and metal-oxide-semiconductor field-effect transistor (MOSFET) technologies and combines the advantages of both.A VS-40MT120UHAPBF module is composed of four IGBTs and four fast recovery diodes with a maximum voltage of 1200V and a rated current of 40A. It is designed for high-power motor control applications. Due to its superior technological performance, the VS-40MT120UHAPBF can be used in a variety of applications including AC and DC drives, renewable energy systems and energy efficient lighting applications.The VS-40MT120UHAPBF module features a high voltage, low on-state resistance, and low switching losses. To control the power of a motor, the VS-40MT120UHAPBF uses a series of current pulses to turn on and off the power. These pulses are typically generated by an insulated gate driving circuit, typically a pulse-width modulation (PWM) circuit.When the insulated gate driving circuit sends an appropriate voltage signal to the gate of the IGBT, the device is switched on. This causes a current to flow from the collector to the emitter. As the voltage at the gate increases, the IGBT will switch on more, thus increasing the current. When the voltage level at the gate reaches a certain level, the device will switch off and the current will stop flowing.The VS-40MT120UHAPBF module can also be used in half-controlled and fully-controlled applications. In a half-controlled application, the VS-40MT120UHAPBF turns on and off at the same point in a motor\'s rotational cycle. This simplifies the motor control process because it is not necessary to adjust the switching points as the application changes.In a fully-controlled application, the VS-40MT120UHAPBF can be used to control the timing and power of a motor. This allows the user to adjust the device to provide precisely the amount of power needed for a particular application.The VS-40MT120UHAPBF module is ideal for applications that require tight control of the amount of power delivered to a device. It provides superior performance in harsh conditions, allowing the user to use it in a variety of applications. It is also suitable for applications that require a high voltage and current handling capacity. By using the IGBT technology, the VS-40MT120UHAPBF can provide superior performance over conventional switching devices.
The specific data is subject to PDF, and the above content is for reference
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