VS-50MT060WHTAPBF Allicdata Electronics
Allicdata Part #:

VS-50MT060WHTAPBF-ND

Manufacturer Part#:

VS-50MT060WHTAPBF

Price: $ 42.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT 600V 114A 658W MTP
More Detail: IGBT Module Half Bridge 600V 114A 658W Chassis Mo...
DataSheet: VS-50MT060WHTAPBF datasheetVS-50MT060WHTAPBF Datasheet/PDF
Quantity: 221
1 +: $ 38.20320
10 +: $ 35.88670
25 +: $ 34.72890
100 +: $ 32.18200
Stock 221Can Ship Immediately
$ 42.02
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 114A
Power - Max: 658W
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 100A
Current - Collector Cutoff (Max): 400µA
Input Capacitance (Cies) @ Vce: 7.1nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Supplier Device Package: MTP
Description

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The VS-50MT060WHTAPBF is a insulated gate bipolar transistor (IGBT) module, consisting of a pair of IGBTs and anti-parallel free-wheel diodes situated in a single package. The device offers high voltage and current ratings, paired with its compact size and low weight. The power module is primarily used in general-purpose switching and motor drive applications.

In general, IGBT modules are used to perform various switching and logic functions such as changing the output voltage and current levels in common industrial applications, electrical vehicles and various other equipments. As compared to a regular transistor, IGBT modules utilize a combination of both bipolar and field effect transistors (FETs). IGBT devices have the output characteristics of a FET and the input characteristics of a bipolar transistor. The IGBT provides lower on-state voltage than a traditional transistor and higher current ratings. This is desired for applications such as motor switching, since the on-state voltage and current do not need to be too high in order to switch the motor on and off. The IGBT module is designed to be used in medium to high voltage switching applications, such as controlling high current motors.

The VS-50MT060WHTAPBF features a gate-emitter breakdown voltage rating of 600V, a gate-collector breakdown voltage rating of 1500V, a collector current rating of 60A, and a total power dissipation of 200W. It has a low turn-on voltage of 3V and a maximum turn-off voltage of 15V. The device is rated for operating temperature ranges of -40°C to 105°C and is housed in a TO-3 package. The module also has two built-in free-wheel diodes, which allows for reverse voltages to be applied with no damage to the module.

The working principle of the VS-50MT060WHTAPBF involves a control of the current flow between the collector and the emitter with a control voltage at the Gate. When the Gate voltage is brought above a certain threshold voltage, the device begins to conduct current from the collector to the emitter. When the Gate voltage is dropped below that threshold voltage, the device stops conducting current and ceases operation. This can be used to control large amounts of current, up to 60A, as it flows through the device by controlling the Gate voltage.

The VS-50MT060WHTAPBF is a robust IGBT module designed for industrial applications such as motor switching, HVAC, solar inverters, and chargers. It is designed to offer high ratings at low weights and is suitable for any application that requires low-on-state voltages, high current ratings and efficient operation.

The specific data is subject to PDF, and the above content is for reference

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