
Allicdata Part #: | VS-EMG050J60N-ND |
Manufacturer Part#: |
VS-EMG050J60N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 600V 88A 338W EMIPAK2 |
More Detail: | IGBT Module Half Bridge 600V 88A 338W Chassis Mou... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 88A |
Power - Max: | 338W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 50A |
Current - Collector Cutoff (Max): | 100µA |
Input Capacitance (Cies) @ Vce: | 9.5nF @ 30V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | EMIPAK2 |
Supplier Device Package: | EMIPAK2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The VS-EMG050J60N is a module that utilizes IGBTs. It is a type of transistor and is used where switching power sources are needed, because of its high performance and reliability. This module is used in variety of industries and applications, such as renewable energy and automotive markets.
An IGBT module, such as the VS-EMG050J60N, contains IGBTs. These are switching devices that are based on the theory of field-effect transistors (FETs). An IGBT is composed of two switching elements: a junction field-effect transistor (JFET) and a bipolar transistor and allows for fast switching. IGBTs are capable of switching larger loads and can be used in a variety of ways. For example, they can be used to control the speed of an electric motor, to drive an inductive circuit, or to construct an inverter.
The VS-EMG050J60N module is part of the EMG50 family of IGBT modules from Yaskawa. It is designed for high-frequency operations and is suitable for a variety of applications, such as motor control and power conversion. The module has a high current capacity, low gate charge losses, and it is suitable for frequencies up to 100kHz.
The working principle of the VS-EMG050J60N is simple but effective. It uses an IGBT to act as a switch, which is then triggered by a gate signal. The gate signal is connected to the IGBT and its voltage is between 0 and the gate voltage, which is determined by the module\'s core voltage. When the gate voltage is applied, the IGBTs will start conducting current and allow current to move through the circuit.
The VS-EMG050J60N provides several advantages over traditional transistors, including high switching speed and high current-carrying capability. Its fast switching capabilities make it very suitable for high-frequency operations. Additionally, the module is highly reliable, has no wear and tear, and has a long lifetime.
The VS-EMG050J60N is used for a variety of purposes in industries such as renewable energy and automotive markets. It can be used in solar inverters, electric vehicle drives, AC drives, and in the automotive industry for power electronics. In the automotive market, this module is used to power lighting, instrumentation, engine control systems, and solar cells.
The VS-EMG050J60N is a reliable and powerful IGBT module used in many industries. It is capable of providing fast switching, high current-carrying capability, and long lifetimes. This module is widely used in solar inverters, electric vehicle drives, AC drives, and other applications. It is made of advanced IGBTs, making it a very reliable and efficient device for many applications.
The specific data is subject to PDF, and the above content is for reference
IGBT MODULE NPT FULL BRIDGE SP6IGBT Modu...

MOD IGBT SIXPACK RBSOA 1200V E1IGBT Modu...

IGBT MOD TRENCH PHASE LEG SP1IGBT Module...

POWER MODULE - IGBTIGBT Module Trench Fi...

PWR MODULEIGBT Module

POWER MOD IGBT 1200V A-IHM130-2IGBT Modu...
