VS-ETL015Y120H Allicdata Electronics
Allicdata Part #:

VS-ETL015Y120HGI-ND

Manufacturer Part#:

VS-ETL015Y120H

Price: $ 56.71
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT 1200V 22A 89W EMIPAK-2B
More Detail: IGBT Module Trench 1200V 22A 89W Chassis Mount EM...
DataSheet: VS-ETL015Y120H datasheetVS-ETL015Y120H Datasheet/PDF
Quantity: 5
1 +: $ 51.55290
10 +: $ 48.97620
25 +: $ 47.68750
100 +: $ 44.14310
Stock 5Can Ship Immediately
$ 56.71
Specifications
Series: --
Part Status: Active
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 22A
Power - Max: 89W
Vce(on) (Max) @ Vge, Ic: 3.03V @ 15V, 15A
Current - Collector Cutoff (Max): 75µA
Input Capacitance (Cies) @ Vce: 1.07nF @ 30V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: EMIPAK-2B
Supplier Device Package: EMIPAK-2B
Description

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The VS-ETL015Y120H transistor module is a type of insulated gate bipolar transistor (IGBT), which is a semiconductor device that combines elements of field-effect transistors (FETs) and bipolar transistors. The module can switch high-voltages and high-currents, and is available in various packages, such as through-hole, surface-mount, or dual-in-line. Thus, making them suitable for a range of applications including motor control, power supplies, and switched-mode power supplies. In addition, these modules are available in currents of up to 1200 amps and voltages of up to 15V.An IGBT module is an electronic switch, comprised of two semiconductor layers, each with a different doped material. When a positive voltage is applied to one layer and a negative voltage is applied to the other, electric current can flow. This process is known as “avalanche breakdown” and is used to create a high-frequency switch in the module. The two layers are separated by an insulator, which prevents electric current from flowing until a voltage is applied.The module\'s salient features include fast switching, high thermal security, and a switch-on-repeat characteristic. The fast switching speed makes it ideally suited for applications running at high frequencies, such as switching power supplies; while the high thermal security ensures that it can handle the high power and voltage levels typically associated with such applications. Finally, the module\'s switch-on-repeat characteristic allows it to be switched on and off multiple times during the same period, making it a very efficient solution for certain types of applications.The VS-ETL015Y120H’s typical applications include motor control, power supplies, switched-mode power supplies, and other trace applications where high voltage switching or high power and current levels are required. It is widely used in power electronics, automotive, renewable energy, and industrial automation markets. Furthermore, the module is widely available in various packages, which makes it easy to customize for any given application.In conclusion, the VS-ETL015Y120H transistor module is an insulated gate bipolar transistor (IGBT) which combines the features of field-effect transistors (FETs) and bipolar transistors. It is widely used in motor control, power supplies, and switched-mode power supplies applications. It is rated up to 1200 amps and 15V and offers the benefits of fast switching, high thermal security, and switch-on-repeat characteristics. The module is widely available in various packages, thus allowing customization of the module for any given application.

The specific data is subject to PDF, and the above content is for reference

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