Allicdata Part #: | VS-GA100NA60UP-ND |
Manufacturer Part#: |
VS-GA100NA60UP |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 600V 100A 250W SOT-227 |
More Detail: | IGBT Module Single 600V 100A 250W Chassis Mount S... |
DataSheet: | VS-GA100NA60UP Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 50A |
Current - Collector Cutoff (Max): | 250µA |
Input Capacitance (Cies) @ Vce: | 7.4nF @ 30V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227 |
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- VS-GA100NA60UP Application Field and Working Principle
-
- Transistors
- IGBTs (Insulated-gate Bipolar Transistors)
- Modules
The VS-GA100NA60UP module is an insulated-gate bipolar transistor (IGBT) module that is used in power electronics. It is composed of three power semiconductors: two IGBTs and one free-wheel diode. It has a wide range of applications, such as driving inverters, uninterruptible power supplies (UPSs), frequency conversion and variable speed drives, automotive auxiliary and starter systems, and other similar power control applications.
This IGBT module features short turn-off time, fast body diode, low gate drive power, low switching loss, fast thermal response and tight spread in the parameters. Its minimum gate trigger voltage is commonly 4.5V, and its maximum collector current is 100A.
The principle of an IGBT module is based on the fact that when a positive voltage is applied to the base and a negative voltage to the emitter, zener electrons provide the hole current between the base and the emitter. This hole current enables the device to operate as an on/off switch, allowing current to flow from collector to emitter when the base-emitter junction becomes forward biased. When the base-emitter junction is reverse biased, the IGBT module blocks current from collector to emitter.
This technology allows for better power control and continuity, as well as higher switching frequencies compared to the traditional bipolar junction transistors (BJTs). The IGBT module also has fast turn-off characteristics.
The VS-GA100NA60UP module is a cost-effective solution for various industrial applications. It has a power dissipation of 119W and gate drive power of 9W, meaning that it requires less energy than other similar IGBT modules. Its turn-off time is also very short, making it extremely reliable.
In addition, the VS-GA100NA60UP IGBT module is designed to withstand high-temperature environments and can be used in harsh environments with temperatures ranging up to 140°C. The module also has a built-in temperature sensor to provide protection against thermal runaway conditions.
It should be noted that the VS-GA100NA60UP must be installed with the correct directional polarity, as indicated by the marked polarity on the module, to prevent damage. Also, the module should be mounted on a heatsink to ensure proper cooling, as well as prevent failure of the load or IGBT module due to excessive heat.
The VS-GA100NA60UP IGBT module is an ideal solution for a wide range of power control applications due to its fast switching capabilities, cost-effectiveness, and reliable performance. It is an excellent choice for both industrial and automotive applications, as it provides a higher level of power control and smooth operation.
The specific data is subject to PDF, and the above content is for reference
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