VS-GA200SA60SP Allicdata Electronics
Allicdata Part #:

VS-GA200SA60SP-ND

Manufacturer Part#:

VS-GA200SA60SP

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: MODULE IGBT SOT-227
More Detail: IGBT Module Single 600V 781W Chassis Mount SOT-2...
DataSheet: VS-GA200SA60SP datasheetVS-GA200SA60SP Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Power - Max: 781W
Vce(on) (Max) @ Vge, Ic: 1.3V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 16.25nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Description

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The VS-GA200SA60SP is an advanced insulated gate bipolar transistor module (IGBT) manufactured by Fuji Electric. This module is designed to interface with various power supply systems including voltage converters, inverters and motor drive systems.

The VS-GA200SA60SP module provides an efficient, reliable and cost-effective means of controlling the flow of power. It is a three-phase IGBT module that is capable of switching frequencies up to 20 kHz with a shared E-gate drive. This module offers a wide range of benefits including over-voltage protection, negative voltage control, and output current limitation, making it ideal for use in industrial and military applications.

The VS-GA200SA60SP module’s working principle is based on the use of an insulated gate bipolar transistor (IGBT). An IGBT is a three-terminal power semiconductor device that combines the advantageous features of both a bipolar junction transistor and a metal-oxide-semiconductor field-effect transistor. The IGBT works by applying a voltage to the gate that controls the main current flowing between the collector-emitter terminals.

The main advantages of the VS-GA200SA60SP module are its high power density, small size and high efficiency. Additionally, the module has an integrated diode bridge that increases the efficiency of the circuit and helps to reduce component stress by sharing the current between the IGBTs. The module’s built-in thermal shutdown protection is also useful for protecting the circuit from high temperatures.

The VS-GA200SA60SP module is ideal for use in applications such as HVAC, renewable energy, battery managers and motor drive systems. Its high power density and high efficiency make it suitable for applications where space is limited. In addition, the module has a wide voltage range and can be used to regulate the current of a variety of AC/DC power supply systems.

The VS-GA200SA60SP module can form the basis of a variety of high power AC/DC power supply systems. Its IGBTs and integrated diode bridge help to ensure a high efficiency and low component stress. Its small size, wide voltage range and integrated thermal shutdown protection make it an ideal choice for a variety of industrial, commercial and military applications.

The specific data is subject to PDF, and the above content is for reference

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