VS-GA200SA60UP

Series:	--
Part Status:	Active
IGBT Type:	--
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	200A
Power - Max:	500W
Vce(on) (Max) @ Vge, Ic:	1.9V @ 15V, 100A
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	16.5nF @ 30V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	SOT-227

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Introduction

a VS-GA200Sa60UP module is an Insulated Gate Bipolar Transistor (IGBT) module. This device offers power device designers high power, high efficiency, and high-voltage capability. The VS-GA200Sa60UP is designed for power switching applications in the industrial market and is ideal for use with AC or DC power control systems. The VS-GA200sa60UP provides unparalleled safety, reliability, and performance for critical power systems.

Application Field

The VS-GA200sa60UP is designed for power switching applications. These applications include AC and DC drives for motors, inverters, chargers, and other switching applications requiring high power, high efficiency, and high voltage capability. This device is especially suited for applications where current transients may require a fast response.The VS-GA200sa60UP is suitable for PFC (Power Factor Correction), UPS (Uninterruptible Power Supply), UPS (Uninterruptible Power Source), and HEV (Hybrid Electric Vehicle) applications. The device is also compatible with other power switching devices such as IGBTs, MOSFETs, and GTOs.

Working Principle

The VS-GA200sa60UP is an Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It operates in a three-terminal configuration, consisting of an emitter, collector, and Gate terminal.The VS-GA200sa60UP is an inherently fast device that has an extremely low switching time. It also has a low on-state voltage drop and a very low quiescent current.The VS-GA200sa60UP is designed to be operated in gate-controlled mode. When the Gate terminal is driven by a logic level voltage, the device switches on and off at the desired time. When the Gate terminal is driven by a negative voltage, the device is off.When the device is in the on-state, current flows between the emitter and collector terminals. The collector-emitter voltage drop (VCEsat) is minimized in order to reduce power dissipation across the device when switching.

Conclusion

The VS-GA200sa60UP module is an Insulated Gate Bipolar Transistor (IGBT) module designed for power switching applications in the industrial market. It offers power device designers high power, high efficiency, and high-voltage capability, as well as unparalleled safety, reliability, and performance for critical power systems. The device is designed to be operated in gate-controlled mode, enabling it to switch on and off at the desired time. The VS-GA200sa60UP is suitable for PFC, UPS, and HEV applications, as well as other power switching tasks.

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