Allicdata Part #: | VS-GA200TH60S-ND |
Manufacturer Part#: |
VS-GA200TH60S |
Price: | $ 246.38 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 600V 260A 1042W INT-A-PAK |
More Detail: | IGBT Module Half Bridge 600V 260A 1042W Chassis M... |
DataSheet: | VS-GA200TH60S Datasheet/PDF |
Quantity: | 1000 |
12 +: | $ 223.98600 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 260A |
Power - Max: | 1042W |
Vce(on) (Max) @ Vge, Ic: | 1.9V @ 15V, 200A (Typ) |
Current - Collector Cutoff (Max): | 5µA |
Input Capacitance (Cies) @ Vce: | 13.1nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Double INT-A-PAK (3 + 4) |
Supplier Device Package: | Double INT-A-PAK |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The VS-GA200TH60S is a IGBT module, which is widely used in the power electronic industry due to its controllability and energy efficient properties. The module integrates the gate driver, IGBT, logic control, and protection circuits into a compact, hermetically sealed package, which simplifies the design process and decreases system associated costs.
Generally speaking, IGBTs are power elements which combine the properties of both BJT and MOSFET structures, and therefore, provide an efficient switching speed for different power applications. The VS-GA200TH60S device is best suited for applications such as motor controls, UPS systems, switching power supplies, and renewable energy equipment.
The working principle of a VS-GA200TH60S IGBT module is quite simple. It consists of two insulated gate structures, one P-type and one N-type, separated by a thin substrate material. When a positive voltage is applied to the external gate of the module, current flows through the substrate, inducing a positive voltage and making the P-type concentrated region to become more positively charged than the N-type area. This, in turn, creates a low impedance cavity and allowsfor efficient current flow.
When the power supply is disconnected and the module is deactivated, due to P-N characteristics, the positive voltage maintained in the P-type region induces a negative voltage in the N-type region. This causes the N-type region to become more negatively charged than the P-type area, thereby increasing the impedance and stopping the current from flowing.
The VS-GA200TH60S device offers total gate management, including gate current limitation, gate inhibit, short-circuit protection and under-voltage lockout features, which make it ideal for controlling motor speed and enhancing the performance of power supplies. This module also features anti-parallel freewheeling diodes with an excellent soft-commutation property, which minimizes losses during the switching process.
In conclusion, the VS-GA200TH60S IGBT module is an ideal solution for various industrial applications due to its excellent controllability, high power density and fast switching speed capabilities. It combines both BJT and MOSFET technologies, which make it a reliable and energy efficient product, suited for switching power supplies, motor controls, UPS systems, and renewable energy equipment.
The specific data is subject to PDF, and the above content is for reference
IGBT MODULE NPT FULL BRIDGE SP6IGBT Modu...
MOD IGBT SIXPACK RBSOA 1200V E1IGBT Modu...
IGBT MOD TRENCH PHASE LEG SP1IGBT Module...
POWER MODULE - IGBTIGBT Module Trench Fi...
PWR MODULEIGBT Module
POWER MOD IGBT 1200V A-IHM130-2IGBT Modu...