VS-GB100DA60UP

Series:	--
Part Status:	Obsolete
IGBT Type:	--
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	600V
Current - Collector (Ic) (Max):	125A
Power - Max:	447W
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 100A
Current - Collector Cutoff (Max):	100µA
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SOT-227-4, miniBLOC
Supplier Device Package:	SOT-227

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VS-GB100DA60UP Application Field and Working Principle

Introduction

The VS-GB100DA60UP is an Insulated Gate Bipolar Transistor (IGBT) module designed by Fuji Electric. Its features include: * A soft-switching technology to reduce switching losses * Low loss diode built-in * High temperature operation (Tj = 150 degrees C) * Fast switching speed and low on-state losses * Operating up to1000V The VS-GB100DA60UP was designed with high-speed switching and high performance power devices in mind. It can be used in many applications, such as motor drives, inverters, switching power supplies, and UPS systems. With its high voltage, fast switching speed and low on-state losses, it is ideal for high-power applications.

Application Field

The VS-GB100DA60UP can be used in various applications, including motor drives, inverters, switching power supplies, and UPS systems. In motor drives, the high voltage allows for higher efficiency, as the voltage drop across the IGBT is lower than that of other devices. In inverters, the fast switching speed enables higher frequency and better control. Switching power supplies also benefit from the high voltage and fast switching speed, as well as the low on-state losses. Finally, UPS systems benefit from the high temperature operating capabilities, enabling higher reliability and better performance.

Working Principle

The VS-GB100DA60UP is an IGBT module composed of two IGBTs and one anti-parallel diode mounted on a metal baseplate. The IGBTs are connected in parallel, allowing current to flow in both directions. When a voltage is applied across the gate terminals, the IGBTs turn on, allowing current to flow with very low on-state voltage. When the gate voltage is removed, the IGBT turns off, blocking current from flowing and providing dissipation-free switching. The parasitic diode connected in parallel to the IGBTs allows current to flow in an alternate path should the IGBTs be turned off, providing protection for the gate terminals.

Conclusion

The VS-GB100DA60UP is an IGBT module designed by Fuji Electric with

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