Allicdata Part #: | VS-GB100LH120N-ND |
Manufacturer Part#: |
VS-GB100LH120N |
Price: | $ 203.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 1200V 200A 833W INT-A-PAK |
More Detail: | IGBT Module Single 1200V 200A 833W Chassis Mount ... |
DataSheet: | VS-GB100LH120N Datasheet/PDF |
Quantity: | 1000 |
12 +: | $ 184.85200 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 200A |
Power - Max: | 833W |
Vce(on) (Max) @ Vge, Ic: | 1.77V @ 15V, 100A (Typ) |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 8.96nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Double INT-A-PAK (3 + 4) |
Supplier Device Package: | Double INT-A-PAK |
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Transistors are a type of semiconductor device commonly used in digital logic and power electronics. IGBTs (Insulated Gate Bipolar Transistors) are the most popular type of transistor used in modern electronics. Modules are the physical components that make up IGBTs and are used to create high-power electronic circuits. The VS-GB100LH120N is a popular IGBT module and this article will discuss its application field and working principle.
The VS-GB100LH120N is a fully-enclosed IGBT module designed for use in high-power applications. It features a maximum current varying from 100 A to 1000 A and a maximum voltage of 1200V. Due to its high current and voltage capabilities, it is an ideal choice for use in a variety of applications such as motor control, solar power systems, uninterruptible power supply systems, UPS systems and motor drives.
In terms of its working principle, the VS-GB100LH120N is a high-power single-phase IGBT module which uses an insulated gate to control the voltage potential between the collector and the emitter. When a positive voltage is applied to the gate, a junction between the collector and the emitter is formed and this creates a path for current flow. The amount of current that flows through the module can be adjusted by adjusting the applied voltage to the gate.
The VS-GB100LH120N also features a robust construction that allows it to withstand high temperatures and vibrations without damage. It is fully enclosed and has an insulated case that prevents the risk of electric shock. The module also features a thermal protection which shuts down the module if it overheats, preventing damage.
Overall, the VS-GB100LH120N is a versatile and reliable IGBT module that is suitable for use in a variety of high-power applications. It features a high current and voltage rating and a robust construction that allows it to withstand high temperatures and vibrations. The insulated gate allows for precise control of the current through the module and the module also features a thermal protection which shuts it down if it becomes too hot.
The specific data is subject to PDF, and the above content is for reference
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