VS-GB100LP120N

Series:	--
Part Status:	Active
IGBT Type:	--
Configuration:	Single
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	200A
Power - Max:	658W
Vce(on) (Max) @ Vge, Ic:	1.8V @ 15V, 100A (Typ)
Current - Collector Cutoff (Max):	1mA
Input Capacitance (Cies) @ Vce:	7.43nF @ 25V
Input:	Standard
NTC Thermistor:	No
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	INT-A-Pak
Supplier Device Package:	INT-A-PAK

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Introduction to VS-GB100LP120N Application Field and Working Principle

The VS-GB100LP120N is an advanced IGBT module that is intended for switching, phase control and rectifying applications. This module is available in a hermetic terminal, which has a single drain pin and a large contact area for installation of either a positive or negative connection. With its advanced design, this module offers superior performance over traditional IGBTs.

Application Field of VS-GB100LP120N

The VS-GB100LP120N module is ideal for switching and phase control applications in a wide range of applications, including electric vehicles, power electronics, solar power, industrial robotics, and electric traction. Its IGBT technology offers superior efficiency, allowing for higher power transmissions, higher switching speeds, and lower power losses. Its unique design includes a single drain pin, allowing it to be easily integrated into existing systems, while also offering a high degree of flexibility when it comes to installation. Additionally, the single drain pin simplifies the wiring process, making it easier to connect the module to existing systems.

Working Principle of VS-GB100LP120N

The VS-GB100LP120N utilizes IGBT technology, which is a type of power transistor. This type of transistor consists of a gate, drain, and source, which are controlled by an input signal. When a current passes through the gate, it causes a voltage drop across the drain, which results in a voltage at the source. Since IGBT transistors have a low “on” resistance, they allow for high levels of switching and power transmission. The VS-GB100LP120N module is specifically designed for switching and phase control applications. In these applications, the module is used to control the level of current passing through components of the system. For example, in an electric vehicle application, the VS-GB100LP120N can be used to control the current flowing to the electric motors and batteries. By controlling the current flow, the VS-GB100LP120N can regulate the speed and torque of the electric motors, allowing for greater control over the vehicle’s performance.

Conclusion

The VS-GB100LP120N is an advanced IGBT module that is ideal for switching and phase control applications in a wide range of applications. Its IGBT technology offers superior switching capabilities, allowing for higher power transmissions, higher switching speeds, and lower power losses. Additionally, it can be easily integrated into existing systems, due to its single drain pin design. With its advanced design and features, the VS-GB100LP120N provides an ideal solution for many power applications.

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