VS-GB100NH120N

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IGBT modules are semiconductor devices consisting of insulated gate bipolar transistors (IGBTs) in the same package, that can be connected together for efficient and reliable power conversion. The VS-GB100NH120N IGBT module is specifically designed for high-power applications such as electric vehicle traction, solar and wind energy systems, medical equipment, etc. It features a low conduction and switching losses due to the use of advanced design and packaging technologies. This IGBT module is especially suitable for medium-to-high power applications with various types of pulse waveforms, allowing for high speed switching and high operating frequency.

The VS-GB100NH120N IGBT module is a high power, fast switching module that features unique features, such as a high switching frequency , high efficiency and a wide operating voltage range (50 to 600V). It consists of two IGBTs in half bridge configuration to provide high frequency switching from 50 Hz to over 5kHz. Each half bridge has an output capacitor, a low-resistance path between the collector and emitter, and a low-impedance gate driver to achieve efficient energy conversion.

The VS-GB100NH120N IGBT module is suitable for various high power applications such as motor drives, solar and wind energy systems, electric vehicle propulsion and heavy industrial machinery. With its high switching frequency and wide operating voltage range, it can be used for high speed switching and high efficiency energy conversion. It also has a low conduction and switching losses, thanks to the advanced design and packaging technologies used to make it.

The working principle of the VS-GB100NH120N IGBT module is based on the use of two Insulated Gate Bipolar Transistors (IGBTs) which are connected in parallel. When the gate signal is applied, the IGBTs are switched “ON” and the current flows between collector and emitter. Due to the low resistance between collector and emitter, less energy is converted to heat and more of it is transferred to the load, resulting in high efficiency. When the gate signal is removed, the IGBTs are switched “OFF” and the current is interrupted, thus allowing for fast recovery times.

In conclusion, the VS-GB100NH120N IGBT module is a high power, fast switching device designed for various medium-to-high power applications requiring fast switching and high operating frequency. It is suitable for various applications such as motor drives, solar and wind energy systems, electric vehicle propulsion and heavy industrial machinery. The module offers low conduction and switching losses and allows for high efficiency energy conversion, thanks to its advanced design and packaging technologies.

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