VS-GB100TH120U

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IGBT (Insulated Gate Bipolar Transistors) are power semiconductor devices with very wide range of applications. They are used in many industrial and consumer applications such as electric power transmission, motor drives, household electric appliances, lighting, and industrial electronics.The VS-GB100TH120U IGBT module is a 1200V/100A insulation gate bipolar transistor module released by Japan\'s VDD Inc. It is a non-Insulated Type having built-in anti-parallel FRD (Free Wheeling Diode).The VS-GB100TH120U features high switching speed for high-speed switching applications, low switching power loss for energy conservation, high-frequency modulation for low noise and high efficiency, and low-saturation voltage for low power dissipation. Additionally, it has built-in protection circuits for thermal runaway and electrode over-current protection.

Application Field

The VS-GB100TH120U module can be found in a wide range of applications, including motor drives for general home appliances, lighting, industrial machinery and electric vehicle drives, as well as UPS and PFC. It also lends itself to solar power systems, medical equipment, and inverters and converters for transportation systems.

Working Principle

An IGBT\'s working principle is similar to that of a MOSFET but with added current carrying capabilities. It operates by applying a bias voltage to the gate that controls the current flowing between the emitter and collector. The IGBT applies low voltage to the gate, switching the IGBT on, and applies a high voltage to the gate, switching it off.When the IGBT is off, the current flowing between the emitter and collector is cut off and the IGBT is shut down. When the IGBT is on, the current between the emitter and collector is allowed to flow.The VS-GB100TH120U comes with an integrated anti-parallel FRD (Free Wheeling Diode) that acts in tandem with the IGBT to increase switching speed and reduce switching loss. The FRD works by allowing current to flow in one direction when the IGBT is off, and in the opposite direction when the IGBT is on.

Conclusion

The VS-GB100TH120U IGBT module is a versatile device used in a wide variety of applications. It combines the low-voltage control of a MOSFET with the current carrying capability of a bipolar transistor, as well as the anti-parallel FRD (Free Wheeling Diode) for improved switching speeds and reduced losses. Its low-saturation voltage, high switching speed, and high efficiency make it an ideal choice for energy-saving applications.

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