VS-GB100TP120U Allicdata Electronics
Allicdata Part #:

VS-GB100TP120U-ND

Manufacturer Part#:

VS-GB100TP120U

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT 1200V 150A 735W INT-A-PAK
More Detail: IGBT Module Half Bridge 1200V 150A 735W Chassis M...
DataSheet: VS-GB100TP120U datasheetVS-GB100TP120U Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 150A
Power - Max: 735W
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 100A
Current - Collector Cutoff (Max): 2mA
Input Capacitance (Cies) @ Vce: 4.3nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: --
Mounting Type: Chassis Mount
Package / Case: INT-A-Pak
Supplier Device Package: INT-A-PAK
Description

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VS-GB100TP120U Application Field and Working Principle

Introduction to VS-GB100TP120U

The VS-GB100TP120U is a high power Insulated Gate Bipolar Transistor (IGBT) module. It is rated for 900 Amps and 1200 Volts and can be used for a wide variety of applications including motor drives, welding, uninterruptable power supplies, inductive heating and industrial automation. The module features a low on-state voltage drop, low losses and low gate drive power requirements.

Application Field

The VS-GB100TP120U is a high power IGBT module and is ideally suited for applications requiring high current switching. It is most commonly used in motor drive applications such as Variable Frequency Drives (VFDs), Uninterruptible Power Supplies (UPS) and welding applications. It can also be used for inductive heating, industrial automation and other applications where high power switching is needed.

CT-GB100TP120U Working Principle

The VS-GB100TP120U operates on the principle of voltage-controlled current switching. It utilizes an insulated gate structure to control the current flow between its two terminals. The gate voltage is applied to the two gates which will modulate the current that flows between the two terminals depending on the voltage applied to the gates.When the gate voltage is applied to the two gates, the electrons located in the channel between the two terminals creates a potential barrier, allowing current to flow between them. This current is then controlled by the gate voltage, allowing for precise control of the current flow.

The Advantages of the VS-GB100TP120U

The VS-GB100TP120U has several advantages which make it ideal for motor drive and welding applications. Its low on-state voltage drop allows for high efficiency, resulting in lower operating costs. Its low loss design means that there is less wasted energy, which in turn leads to increased efficiency. Its low gate drive power requirement allows for longer operation times and improved reliability. Its high power rating makes it perfect for high current switching applications. Finally, its silent operation ensures that the environment around the application is not disturbed.

Conclusion

The VS-GB100TP120U is a high power IGBT module that is ideally suited for high current switching applications such as motor drives, welding, uninterruptable power supplies, inductive heating and industrial automation. Its low on-state voltage drop, low losses and low gate drive power requirements make it the perfect choice for these applications. Its high power rating and silent operation make it an ideal choice for an array of applications.

The specific data is subject to PDF, and the above content is for reference

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