Allicdata Part #: | VS-GB150TH120N-ND |
Manufacturer Part#: |
VS-GB150TH120N |
Price: | $ 269.69 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 1200V 300A 1008W INT-A-PAK |
More Detail: | IGBT Module Half Bridge 1200V 300A 1008W Chassis ... |
DataSheet: | VS-GB150TH120N Datasheet/PDF |
Quantity: | 1000 |
12 +: | $ 245.17200 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 300A |
Power - Max: | 1008W |
Vce(on) (Max) @ Vge, Ic: | 2.35V @ 15V, 150A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 11nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Double INT-A-PAK (3 + 4) |
Supplier Device Package: | Double INT-A-PAK |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
```VS-GB150TH120N application field and working principle
VS-GB150TH120N is a popular choice for the automotive industry and it’s easy to see why. This module is a convenient and cost-effective solution for providing clean power to a car’s electrical system as well as controlling the voltage and current flowing through it. Here, we’ll take a closer look at what this component does and how it works.
Introduction of VS-GB150TH120N
VS-GB150TH120N is an insulated-gate bipolar transistor module for industrial applications. It is designed for applications that require high current operation, such as motor control and power conversion. The device features a high voltage dielectric, low on-state gate voltage, and a fast switching rate. It is also easy to install, reducing installation time and cost.
Operation Principle
The VS-GB150TH120N operates on the principle of an IGBT (Insulated Gate Bipolar Transistor). This type of transistor is essentially a combination of an insulated-gate Field Effect Transistor (MOSFET) and a bipolar junction transistor (BJT). It has the fast switching speed of a MOSFET, while also having the high current and voltage capabilities of a BJT. By utilizing this circuitry, the device can switch and control both high voltage and high current load applications.
Application Field
The VS-GB150TH120N is well-suited for automotive applications due to its high current and voltage capabilities. The device can be used in a wide range of applications, such as the power supply for electric vehicles, the generator control in HEV systems, and the motor control in hybrid vehicles.
In addition, the device is also used in industrial applications that require high current control, such as power supplies, motor controls, uninterruptible power systems (UPS), and battery-powered systems. The device is also a popular choice for industrial automation systems and serves as a powerful yet efficient power switch.
Conclusion
The VS-GB150TH120N is a highly efficient, cost-effective solution for industrial applications. It is used in motor control and power supply applications in automotive, industrial and battery-powered systems. The device utilizes an IGBT structure, which allows it to switch both high voltage and current load applications.
The specific data is subject to PDF, and the above content is for reference
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