Allicdata Part #: | VS-GB150TH120U-ND |
Manufacturer Part#: |
VS-GB150TH120U |
Price: | $ 97.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 1200V 280A 1147W INT-A-PAK |
More Detail: | IGBT Module Half Bridge 1200V 280A 1147W Chassis ... |
DataSheet: | VS-GB150TH120U Datasheet/PDF |
Quantity: | 1000 |
12 +: | $ 88.41770 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 280A |
Power - Max: | 1147W |
Vce(on) (Max) @ Vge, Ic: | 3.6V @ 15V, 150A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 12.7nF @ 30V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Double INT-A-PAK (3 + 4) |
Supplier Device Package: | Double INT-A-PAK |
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Transistors - IGBTs - Modules
VS-GB150TH120U application field and working principle
Vishay Intertechnology Inc. recently launched a new generation of VS-GB150TH120U IGBT modules from its Vishay Semiconductors division. These modules are the latest addition to Vishay’s Gen3 family of Power IGBT modules, featuring outstanding performance and reliability for efficient, long-term operation.
VS-GB150TH120U IGBT modules are designed to deliver up to 1.5kV/3A ratings and feature an integrated structure and exceptionally low thermal resistance. They offer maximum switching predictions of up to 14kHz, excellent conduction and dynamic performance, and specially designed packaging to prevent failure due to overstressing.
VS-GB150TH120U Application Field
The VS-GB150TH120U IGBT modules are ideal for a wide range of applications, including inverter power supplies, high-frequency welders, plasma cutters, AC motor drives, high-power HVDC, high-power HF inverters, power factor correction, UPS systems, and high-power motor controllers. In all of these applications, the IGBTS provide effective performance and reliability.
VS-GB150TH120U Working Principle and Advantages
The VS-GB150TH120U IGBT modules feature a diode-emitting MOSFET structure, which is able to withstand higher reverse-voltages when turning off, meaning faster and more efficient switching speeds. To further increase speed and efficiency, the IGBT modules have an integrated copper drain-cowling that reduces the on-resistance of the paralleled IGBTs. This ensures low energy consumption, a low acoustic noise, and a reliable starting torque at even the most extreme temperatures.
The VS-GB150TH120U IGBTS also feature a special thermal module designed to ensure both a higher power rating, as well as greater reliability and durability. The thermal module consists of alternate layers of ceramic material, which act as separators between the IGBT and the coolant, and high-power dynamic separation technology to ensure that all the IGBTs remain within the exact same temperature range. This high-performance cooling architecture significantly improves the cooling characteristics of the IGBTs, extending their lifespan and efficiency.
Overall, the VS-GB150TH120U IGBT modules demonstrate outstanding performance and reliability for efficient, long-term operation. The advanced thermal management design ensures low noise, low power consumption and reliable starting performance, even at the most extreme temperatures. In addition, the integrated structure and low thermal resistance provide excellent switching speeds and conduction, allowing them to integrate into applications in a variety of industries.
The specific data is subject to PDF, and the above content is for reference
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