VS-GB150TH120U Allicdata Electronics
Allicdata Part #:

VS-GB150TH120U-ND

Manufacturer Part#:

VS-GB150TH120U

Price: $ 97.27
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT 1200V 280A 1147W INT-A-PAK
More Detail: IGBT Module Half Bridge 1200V 280A 1147W Chassis ...
DataSheet: VS-GB150TH120U datasheetVS-GB150TH120U Datasheet/PDF
Quantity: 1000
12 +: $ 88.41770
Stock 1000Can Ship Immediately
$ 97.27
Specifications
Series: --
Part Status: Active
IGBT Type: --
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 280A
Power - Max: 1147W
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 150A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 12.7nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK
Description

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Transistors - IGBTs - Modules

VS-GB150TH120U application field and working principle

Vishay Intertechnology Inc. recently launched a new generation of VS-GB150TH120U IGBT modules from its Vishay Semiconductors division. These modules are the latest addition to Vishay’s Gen3 family of Power IGBT modules, featuring outstanding performance and reliability for efficient, long-term operation.

VS-GB150TH120U IGBT modules are designed to deliver up to 1.5kV/3A ratings and feature an integrated structure and exceptionally low thermal resistance. They offer maximum switching predictions of up to 14kHz, excellent conduction and dynamic performance, and specially designed packaging to prevent failure due to overstressing.

VS-GB150TH120U Application Field

The VS-GB150TH120U IGBT modules are ideal for a wide range of applications, including inverter power supplies, high-frequency welders, plasma cutters, AC motor drives, high-power HVDC, high-power HF inverters, power factor correction, UPS systems, and high-power motor controllers. In all of these applications, the IGBTS provide effective performance and reliability.

VS-GB150TH120U Working Principle and Advantages

The VS-GB150TH120U IGBT modules feature a diode-emitting MOSFET structure, which is able to withstand higher reverse-voltages when turning off, meaning faster and more efficient switching speeds. To further increase speed and efficiency, the IGBT modules have an integrated copper drain-cowling that reduces the on-resistance of the paralleled IGBTs. This ensures low energy consumption, a low acoustic noise, and a reliable starting torque at even the most extreme temperatures.

The VS-GB150TH120U IGBTS also feature a special thermal module designed to ensure both a higher power rating, as well as greater reliability and durability. The thermal module consists of alternate layers of ceramic material, which act as separators between the IGBT and the coolant, and high-power dynamic separation technology to ensure that all the IGBTs remain within the exact same temperature range. This high-performance cooling architecture significantly improves the cooling characteristics of the IGBTs, extending their lifespan and efficiency.

Overall, the VS-GB150TH120U IGBT modules demonstrate outstanding performance and reliability for efficient, long-term operation. The advanced thermal management design ensures low noise, low power consumption and reliable starting performance, even at the most extreme temperatures. In addition, the integrated structure and low thermal resistance provide excellent switching speeds and conduction, allowing them to integrate into applications in a variety of industries.

The specific data is subject to PDF, and the above content is for reference

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