
Allicdata Part #: | VS-GB150TS60NPBF-ND |
Manufacturer Part#: |
VS-GB150TS60NPBF |
Price: | $ 60.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 600V 138A 500W INT-A-PAK |
More Detail: | IGBT Module NPT Half Bridge 600V 138A 500W Chassis... |
DataSheet: | ![]() |
Quantity: | 1000 |
15 +: | $ 55.36100 |
Series: | -- |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 138A |
Power - Max: | 500W |
Vce(on) (Max) @ Vge, Ic: | 3V @ 15V, 150A |
Current - Collector Cutoff (Max): | 200µA |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | INT-A-PAK (3 + 4) |
Supplier Device Package: | INT-A-PAK |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The VS-GB150TS60NPBF module is an insulated gate bipolar transistor (IGBT) that is designed to handle power outputs up to 1,500 watts. This device is ideal for systems that require higher loads and can handle up to 800 A current demands. It is rated for operation at temperatures up to 175 °C and is well-suited for a variety of applications including renewable energy, automotive, intelligent transportation systems, power tools, and consumer electronic devices.
This module utilizes advanced IGBT technology to achieve superior thermal performance. It is designed with a soft- and zero-voltage switching (sZVS) approach to reduce switching losses and minimize the vibration generated by the device. The module also features a shared gate drive for improved reliability and a low reverse blocking voltage for improved efficiency.
The working principle of the VS-GB150TS60NPBF module is similar to that of a traditional transistor. A small current applied to the transistor at the gate will cause a larger current to flow from the collector to the emitter. The device uses a bipolar junction transistor (BJT) as the control device, which is insulated from the gate. The BJT is then used to modulate the voltage applied to the gate, thus controlling the flow of current through the device.
The module has several advantages over traditional BJT devices. First, the insulation of the gate differential offers better thermal characteristics and lower gate leakage. Second, the device can handle higher currents with less power loss. Finally, the device offers improved flexibility when operating at different voltages and frequencies. In some cases, the voltage can be adjusted from 0-1400 volts, while the frequency can be adjusted from 0-800kHz.
The VS-GB150TS60NPBF module can be used for a variety of applications, ranging from DC motor controls, AC motor controllers, industrial surge controllers, power factor controller and power converters, solar inverters, and household appliance controllers. Additionally, this device is well-suited for applications that require high power output and fast response times.
In conclusion, the VS-GB150TS60NPBF is an effective, reliable, and efficient IGBT device that can be used in a wide range of applications. With its advanced insulation technology, shared gate drive, and low reverse blocking voltage, this device provides a great combination of power output, efficiency, and reliability.
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