| Allicdata Part #: | VS-GB200TH120N-ND |
| Manufacturer Part#: |
VS-GB200TH120N |
| Price: | $ 326.80 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | IGBT 1200V 360A 1136W INT-A-PAK |
| More Detail: | IGBT Module Half Bridge 1200V 360A 1136W Chassis ... |
| DataSheet: |  VS-GB200TH120N Datasheet/PDF |
| Quantity: | 1000 |
| 12 +: | $ 297.08400 |
| Series: | -- |
| Part Status: | Active |
| IGBT Type: | -- |
| Configuration: | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 360A |
| Power - Max: | 1136W |
| Vce(on) (Max) @ Vge, Ic: | 2.35V @ 15V, 200A |
| Current - Collector Cutoff (Max): | 5mA |
| Input Capacitance (Cies) @ Vce: | 14.9nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Double INT-A-PAK (3 + 4) |
| Supplier Device Package: | Double INT-A-PAK |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors - IGBTs - Modules
The VS-GB200TH120N is an IGBT (Insulated Gate Bipolar Transistor) module, which is a type of power transistor module that is used for medium- and high-power switching applications. This particular module is suitable for low-frequency inverters for industrial applications in the range of 200V and up to 120A. It provides superior efficiency, high surge capability, good reliability and high-speed performance.
Application Field of VS-GB200TH120N
The VS-GB200TH120N is designed for high-performance operations in industrial electronics. It is suitable for low-frequency inverters used in welding, paint spraying, and laser cutting systems. Additionally, this module is ideal for AC motor control, UPS and other power supplies, high-frequency lighting applications, wind power converter applications and industrial automation systems.
Working Principle of VS-GB200TH120N
The VS-GB200TH120N is designed to work with a voltage range of 200V and a current range of up to 120A. It is comprised of two smaller transistors connected in a half-bridge configuration. The adjustable current limit protects the module from overcurrent and over temperature during operation, and it also provides a low on-state voltage drop. The module is insulated with a ceramic substrate for optimal thermal management, and includes built-in snubber capacitors for increased power dissipation and improved transient stability. This ensures that switching losses are minimized, improving the overall efficiency of the system.
Advantages of Using VS-GB200TH120N
The VS-GB200TH120N offers a number of advantages when compares to other IGBT modules. It is designed to handle high-current applications up to 120A, and it offers superior performance with low on-state voltage drops. This makes it ideal for applications that require increased efficiency and lower switching losses. Additionally, the built-in snubber capacitors help to minimize transient instability, allowing the system to operate reliably with minimal downtime. The module also has superior surge capability, which allows it to withstand high voltage spikes without damage.
Conclusion
The VS-GB200TH120N is an IGBT module that is designed for medium to high-power switching applications. It is suitable for low-frequency inverters in industrial environments, and is capable of handling up to 120A. The module offers superior efficiency and low on-state voltage drops, along with built-in snubber capacitors for maximum reliability. This makes the VS-GB200TH120N an ideal choice for applications that require increased efficiency and minimal downtime.
The specific data is subject to PDF, and the above content is for reference
IGBT MODULE NPT FULL BRIDGE SP6IGBT Modu...
MOD IGBT SIXPACK RBSOA 1200V E1IGBT Modu...
IGBT MOD TRENCH PHASE LEG SP1IGBT Module...
POWER MODULE - IGBTIGBT Module Trench Fi...
PWR MODULEIGBT Module
POWER MOD IGBT 1200V A-IHM130-2IGBT Modu...