Allicdata Part #: | VS-GB200TH120U-ND |
Manufacturer Part#: |
VS-GB200TH120U |
Price: | $ 326.80 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 1200V 330A 1316W INT-A-PAK |
More Detail: | IGBT Module Half Bridge 1200V 330A 1316W Chassis ... |
DataSheet: | VS-GB200TH120U Datasheet/PDF |
Quantity: | 1000 |
12 +: | $ 297.08400 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 330A |
Power - Max: | 1316W |
Vce(on) (Max) @ Vge, Ic: | 3.6V @ 15V, 200A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 16.9nF @ 30V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Double INT-A-PAK (3 + 4) |
Supplier Device Package: | Double INT-A-PAK |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
VS-GB200TH120U application field and working principle
The application of the VS-GB200TH120U IGBT Module can be divided into different fields with each field having different requirements. The module is available in various versions with the most popular being the 20 A, 1200 V class. These IGBTs are typically used in AC drives, automotive and other applications that require high power switching and current conduction.
The working principle of the VC-GB200TH120U IGBT Module is based on the solid state behavior of an insulated gate bipolar transistor. This type of transistor is a three-terminal device wherein a voltage applied to one of the terminals called the gate turns it “on” and allows current to flow between the two other terminals called the collector and emitter. The amount of current that can flow depends on the type of IGBT used and its current rating.
In order to switch the power switch on and off, the gate voltage must be adjusted to the optimal value. This is usually done with a gate driver circuit, which can be conveniently tuned to effectively control the gate voltage. This circuit comprises of drivers to control up to three IGBTs and consists of an isolation transformer, voltage regulator, power MOSFET, etc. It helps to condition the gate voltage to an optimum level, so that it neither saturates nor creates an instability in the IGBT.
The VC-GB200TH120U IGBT Module is mostly used in high power switching applications, due to its advantage of low switching losses. It is also used in applications such as electric traction drives, elevator/escalator control, uninterruptible power supplies and welding systems, as well as in combination with motors, power converters and DC/DF motors. Other applications include variable speed drives, motor controllers and frequency converters.
The VC-GB200TH120U IGBT Module is an important component in industries, because it is able to enable the user to switch power efficiently and quickly. It provides a much higher switching speed than other power switching components and hence provides a good speed control in motor applications and AC drives. This IGBT is also incredibly durable and offers simple and efficient operation.
In conclusion, the VC-GB200TH120U IGBT Module is an ideal device for a wide range of power switching applications. Its solid construction, low switching losses and durability make it a very attractive choice for many applications. Furthermore, its ability to easily switch power efficiently and quickly makes it a very desirable device for many industries.
The specific data is subject to PDF, and the above content is for reference
IGBT MODULE NPT FULL BRIDGE SP6IGBT Modu...
MOD IGBT SIXPACK RBSOA 1200V E1IGBT Modu...
IGBT MOD TRENCH PHASE LEG SP1IGBT Module...
POWER MODULE - IGBTIGBT Module Trench Fi...
PWR MODULEIGBT Module
POWER MOD IGBT 1200V A-IHM130-2IGBT Modu...