| Allicdata Part #: | VS-GB200TS60NPBF-ND |
| Manufacturer Part#: |
VS-GB200TS60NPBF |
| Price: | $ 93.25 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | IGBT 600V 209A 781W INT-A-PAK |
| More Detail: | IGBT Module NPT Half Bridge 600V 209A 781W Chassis... |
| DataSheet: |  VS-GB200TS60NPBF Datasheet/PDF |
| Quantity: | 1000 |
| 15 +: | $ 84.77490 |
| Series: | -- |
| Part Status: | Active |
| IGBT Type: | NPT |
| Configuration: | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max): | 600V |
| Current - Collector (Ic) (Max): | 209A |
| Power - Max: | 781W |
| Vce(on) (Max) @ Vge, Ic: | 2.84V @ 15V, 200A |
| Current - Collector Cutoff (Max): | 200µA |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | INT-A-PAK (3 + 4) |
| Supplier Device Package: | INT-A-PAK |
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The VS-GB200TS60NPBF is an insulated-gate bipolar transistor (IGBT) module. It consists of two IGBTs and two anti-parallel fast-recovery diodes. The IGBT is a type of transistor consisting of an insulated gate and a p-n junction as the two regions of a transistor. It is a voltage-controlled device that can be used to switch a large amount of current.
The VS-GB200TS60NPBF is suitable for a variety of applications and the use of this transistor can be expanded in many fields. It can be used in motor control circuits, inverters, welding machines, switch-mode power supplies and other switching applications.
The VS-GB200TS60NPBF is an ideal choice for motor control applications. Its high current rating and low on-state resistance make it capable of handling high-performance motors. The IGBT also has a low switching time and low power dissipation. In addition, the fast-recovery diodes have a high forward current rating, low forward voltage drop and high reverse recovery time.
The working principle of the IGBT module is simple. When the gate voltage is increased, current is allowed to flow between the collector and emitter layers. As this current flow increases, it causes a rise in the emitter-collector voltage. This rise in voltage is known as a voltage-gain, which is monitored in the transistor\'s characteristics. This voltage-gain is then used to regulate the emitter-collector voltage. When the voltage-gain is decreased, the transistor switches off and the current flow is stopped.
In addition to motor control applications, the VS-GB200TS60NPBF can also be used in other switching applications. It can be used in switch-mode power supplies to provide high-efficiency regulation. It can also be used in solar inverters for higher performance and efficiency. The IGBT module can even be used in welding machines for improved welding performance.
In summary, the VS-GB200TS60NPBF is an excellent IGBT module for a range of applications. It features a high current rating and low on-state resistance for improved motor control performance. It also has a low switching time and low power dissipation making it ideal for switch-mode power supplies and other switching applications. Itsworking principle is simple, using a voltage-gain to regulate the emitter-collector voltage.
The specific data is subject to PDF, and the above content is for reference
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