VS-GB300TH120N

IGBT modules are a type of transistor technology that uses insulated gate bipolar transistors (IGBTs) rather than metal oxide semiconductor field effect transistors (MOSFETs). IGBTs are a hybrid device, combining the best features of both MOSFETs and bipolar junction transistors (BJTs) and offering a much improved performance due to the high switching speed and higher voltage and current ratings of the IGBT. The VS-GB300TH120N is an IGBT module designed to provide high performance and low emission in the application field.

Application Field

The VS-GB300TH120N IGBT module is designed for applications with high requirement for performance and environment protection. It can be used in servo motor control; drive circuit of electric vehicle such as HEV, PHEV and EV; the drive circuit used for controlling high voltage AC (HVAC); pulse power supply systems used for welding and cutting; high-frequency power supply for UPS systems; and high-power rectification equipment.

Working Principle

An IGBT module is composed of two basic components: the gate driver, which is responsible for turning the device on and off, and the gate-emitter junction, which controls how the device behaves while it is on. The VS-GB300TH120N IGBT module is designed to provide high performance and low emission by combining the two components into a single module. The gate-emitter junction is designed to maximize the current flowing through the device while providing a fast switching time, resulting in a low switching-time current and minimal EMI (electromagnetic interference). The gate driver is also designed to minimize power losses in the switching process, thereby reducing energy consumption in the system.

The VS-GB300TH120N IGBT module includes a built-in bootstrap diode that helps to ensure that the gate drive voltage remains above the source voltage when the device is in an actively switching state. This reduces the chances of device failure due to overvoltage conditions, increasing the lifetime and reliability of the device.

Overall, the VS-GB300TH120N IGBT module provides a simple and effective solution for high-performance and low-emission applications. It combines the advantages of both MOSFET and BJT technologies, resulting in a device with improved performance, reliability and energy efficiency.