VS-GB400TH120U Allicdata Electronics
Allicdata Part #:

VS-GB400TH120U-ND

Manufacturer Part#:

VS-GB400TH120U

Price: $ 185.56
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT 1200V 660A 2660W INT-A-PAK
More Detail: IGBT Module NPT Half Bridge 1200V 660A 2660W Chass...
DataSheet: VS-GB400TH120U datasheetVS-GB400TH120U Datasheet/PDF
Quantity: 1000
12 +: $ 168.68700
Stock 1000Can Ship Immediately
$ 185.56
Specifications
Series: --
Part Status: Active
IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 660A
Power - Max: 2660W
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 400A
Current - Collector Cutoff (Max): 5mA
Input Capacitance (Cies) @ Vce: 33.7nF @ 30V
Input: Standard
NTC Thermistor: No
Operating Temperature: 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Double INT-A-PAK (3 + 4)
Supplier Device Package: Double INT-A-PAK
Description

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VS-GB400TH120U application field and working principle

VS-GB400TH120U belong to the Transistors - IGBTs - Modules family. It is a medium voltage IGBT module with special properties which make it suitable for some special application fields.

Application Field

The main application field of this device is a medium voltage power supply environment. It is used in medium voltage power switches, such as DC to AC inverters, soft start systems, and medium voltage converters. It is also used in high power motor control, as well as in medical ultrasound imaging systems.

Features

The VS-GB400TH120U has several features that make it suited for these application fields. It has an excellent power-to-weight ratio with a low on-state voltage drop. It has a high current carrying ability and wide current/voltage range. It also has a high immunity to noise and excellent thermal efficiency. All these features make it well-suited for use in medium voltage applications.

Working Principle

The VS-GB400TH120U IGBT module is based on the principle of Insulated Gate Bipolar Transistor (IGBT) technology. This technology allows the device to provide both high performance and efficiency in a cost-effective way. The device consists of a base, which is insulated from the gate and emitter by a dielectric material. The gate is used to control the voltage applied across the device and is responsible for the current flow and power output. The emitter is used to control the current through the device. The device works by applying a voltage between the gate and emitter. When this voltage is applied, the gate potential increases, causing current to flow through the device. As the current flows, it generates an output power which is proportional to the applied voltage.

Conclusion

The VS-GB400TH120U IGBT module is a reliable and efficient device for medium voltage applications. It is well-suited for use in medium voltage power supply systems, including DC to AC inverters, soft start systems, and medium voltage converters. It has high current carrying ability and excellent thermal efficiency. It also has a high immunity to noise and excellent power-to-weight ratio. All these features make the device a cost-effective and reliable choice for medium voltage applications.

The specific data is subject to PDF, and the above content is for reference

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