VS-GB50NA120UX Allicdata Electronics
Allicdata Part #:

VS-GB50NA120UX-ND

Manufacturer Part#:

VS-GB50NA120UX

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT 1200V 84A 431W SOT-227
More Detail: IGBT Module NPT Single 1200V 84A 431W Chassis Moun...
DataSheet: VS-GB50NA120UX datasheetVS-GB50NA120UX Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 84A
Power - Max: 431W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A
Current - Collector Cutoff (Max): 50µA
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Description

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VS-GB50NA120UX application field and working principle

The VS-GB50NA120UX is the latest development of the Insulated Gate Bipolar Transistor (IGBT) modules. It is part of the latest series of IGBTs developed by Vishay Semiconductors, one of the global leaders in the semiconductor industry. This type of IGBT module is well suited for various applications in the power electronics industry, such as drives, UPS systems and motor control. The VS-GB50NA120UX is a 1200V IGBT module that has a very high current density, which makes it ideal for use in high-voltage applications. The module also features a high frequency capability and a low on-state voltage drop for efficient operation.

This IGBT module has a 50A rating, making it suitable for use in a wide range of power electronics systems. It also has a wide range of mounting options and thermal characteristics. The module can be used in a variety of applications including solar inverters, welding equipment and motor drives. It can also be used as a power switch in diode bridge rectifiers and can be used as a switching regulator in AC-DC converters.

The working principle of an IGBT module is similar to that of the insulated gate field effect transistor (IGFET). The IGBT module consists of four distinct parts namely: the emitter, the collector, the gate and the substrate. The emitter and collector of the module are formed in a sandwich structure and the gate is made up of a layer of semiconductor material. The operation of the IGBT involves charge carriers flowing through the various layers of the substrate when an electric current passes. Due to the differences in potential between the layers, the charge carriers are trapped in the gate region and create a controlled flow of electrons.

The VS-GB50NA120UX is designed for a wide range of voltage and current applications, ranging from the low to high frequencies. It is a robust and reliable module, which has a low noise emission level and a low voltage drop. This module is especially suited for use in high-frequency applications, due to its high frequency capability. It also has a higher current density when compared to other modules, making it suitable for a wide range of applications including motor control, power supplies and switching regulators.

Using the IGBT module, a designer can develop a high efficiency, reliable, and cost effective system. The module has a wide range of mounting and thermal characteristics making it suitable for a variety of applications. The low on-state voltage drop, high frequency capability and high current density make the module ideal for high-voltage applications, such as UPS systems, drive systems and motor control. The VS-GB50NA120UX is an ideal choice for designers who require high efficiency and reliable performance.

The specific data is subject to PDF, and the above content is for reference

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