Allicdata Part #: | VS-GB50TP120N-ND |
Manufacturer Part#: |
VS-GB50TP120N |
Price: | $ 50.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 1200V 100A 446W INT-A-PAK |
More Detail: | IGBT Module Half Bridge 1200V 100A 446W Chassis M... |
DataSheet: | VS-GB50TP120N Datasheet/PDF |
Quantity: | 1000 |
24 +: | $ 46.06690 |
Series: | -- |
Part Status: | Active |
IGBT Type: | -- |
Configuration: | Half Bridge |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 100A |
Power - Max: | 446W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 50A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 4.29nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | INT-A-PAK (3 + 4) |
Supplier Device Package: | INT-A-PAK |
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IGBTs (Insulated Gate Bipolar Transistor) are a type of transistor with both effective transistor and lateral diode properties, providing huge advantages in terms of energy use and design ability. The VS-GB50TP120N is a special type of IGBT module that is designed for various applications and offer great advantages. In this article, the application field of VS-GB50TP120N and its working principle will be explored.
Application Field
The VS-GB50TP120N module is typically used in frequency converters, thanks to its excellent performance in high-frequency operation. It is also suitable for applications such as motor control, AC drive systems, UPSs (uninterruptible power systems) and power supply systems. This module is also used in battery-powered motor control systems and electric vehicle drive systems, making it a suitable choice for use in eco-friendly contexts.
As for mechanical structure, the VS-GB50TP120N module contains IGBT chips and a built-in control circuit, making it a fully integrated unit. Thanks to this integrated control unit, the module can reduce external parts and provide high reliability and heat resistance. The module also boasts a low-profile design, which makes it suitable for use in higher density applications. Finally, this module provides must-have over-current, over-voltage and temperature protection, allowing it to be used in high performance applications where reliability is key.
Working Principle
The IGBT in the VS-GB50TP120N module works in a similar way as a traditional field-effect transistor. A traditional FET works as a voltage-controlled device, using only one gate to control the current between the source and drain. An IGBT works similarly, but with one key difference. Instead of a single gate, the IGBT has two gates, the "gate-collector" and the "gate-emitter".
The IGBTs of the VS-GB50TP120N module allow a voltage increase from the gate-emitter pin to the gate-collector pin to open the connection between the source and drain. Once the voltage is removed, the current flow between the source and drain is blocked. The IGBT also has a built-in built-in separate control circuit, which is used to reduce external parts and provide high reliability and heat resistance. The separate control circuit reduces the need for external control circuitry which could significantly increase the complexity and cost of the device.
Conclusion
The VS-GB50TP120N IGBT module is a suitable choice for frequency converters, motor control, AC drive systems, UPSs, power supply systems and electric vehicle drive systems. The integrated control unit enables this module to provide high reliability, heat resistance and a low-profile design. Furthermore, the module offers must-have over-current, over-voltage and temperature protection for use in high performance applications. Finally, the IGBTs within the module operate using two gates, the "gate-collector" and the "gate-emitter", to provide improved current control.
The specific data is subject to PDF, and the above content is for reference
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