Allicdata Part #: | VS-GB75LP120N-ND |
Manufacturer Part#: |
VS-GB75LP120N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | IGBT 1200V 170A 658W INT-A-PAK |
More Detail: | IGBT Module Single 1200V 170A 658W Chassis Mount ... |
DataSheet: | VS-GB75LP120N Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
IGBT Type: | -- |
Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 170A |
Power - Max: | 658W |
Vce(on) (Max) @ Vge, Ic: | 1.82V @ 15V, 75A (Typ) |
Current - Collector Cutoff (Max): | 1mA |
Input Capacitance (Cies) @ Vce: | 5.52nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | INT-A-PAK (3 + 4) |
Supplier Device Package: | INT-A-PAK |
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VS-GB75LP120N transistors are a type of insulated gate bipolar transistors (IGBTs) that have a modular design. IGBTs are an efficient type of power semiconductor device that has found a wide range of applications. They are especially well suited for driving high-voltage power electronics loads and are used in a variety of industries, including automotive and renewable energy. The VS-GB75LP120N is one of the most popular IGBT modules due to its high performance and low cost.
The VS-GB75LP120N module is a three-phase IGBT module with a voltage rating of 1200V. It has a current rating of 75A and is designed for use in high power applications. It has a small, compact package size and is designed for easy installation and compatibility with various circuit designs. It is also designed for high-speed switching, with a maximum switching frequency of 20kHz.
One of the key features of the VS-GB75LP120N module is its fast turn-on and fast turn-off times. This feature allows for a high switching frequency as well as fast dynamic response and low total harmonic distortion. The module also has low power dissipation, making it an energy efficient choice.
The VS-GB75LP120N module is used in a variety of applications, including motor drives, electric inverters, motor controllers, uninterruptible power supplies, welding equipment, and electric vehicles. It offers the user a reliable, low-cost solution for applications requiring high power. The module\'s small package size makes it suitable for use in applications where space is limited.
The working principle of the VS-GB75LP120N module is based on the transistor effect. When a current is applied to the gate of the IGBT, the gate-emitter junction creates an electric field. This electric field creates a conductive path between the gate and the source of the transistor. This creates a current flow from the source to the drain, allowing for fast switching and efficient power conversion.
The VS-GB75LP120N module is also designed with over-current and over-temperature protection. This feature ensures reliable operation and prevents damage to the device in the event of an overload. The module also features a built-in logic level control allowing for control of the output voltage and current.
The VS-GB75LP120N module is an ideal choice for high-power applications that require a reliable, low cost solution. It offers fast switching speeds, low power dissipation, and an efficient power conversion. The module\'s small package size makes it suitable for applications where space is limited. It is an excellent choice for a variety of applications, including motor drives, electric vehicles, electric inverters, motor controllers, and uninterruptible power supplies.
The specific data is subject to PDF, and the above content is for reference
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