VS-GB75NA60UF Allicdata Electronics
Allicdata Part #:

VS-GB75NA60UF-ND

Manufacturer Part#:

VS-GB75NA60UF

Price: $ 19.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: IGBT 600V 70A HS CHOPPER SOT-227
More Detail: IGBT Module NPT Single 600V 109A 447W Chassis Moun...
DataSheet: VS-GB75NA60UF datasheetVS-GB75NA60UF Datasheet/PDF
Quantity: 1000
160 +: $ 17.96860
Stock 1000Can Ship Immediately
$ 19.76
Specifications
Series: --
Part Status: Active
IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 109A
Power - Max: 447W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Current - Collector Cutoff (Max): 50µA
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction: A transistor is a semiconductor device used to amplify or switch electrical signals and electrical power. A module is a pre-built combination of components (transistors, generally) with purpose-specific features and ready for use in larger systems. VS-GB75NA60UF is a transistor module, which is a modern type of transistor specifically designed for today’s high-speed, high-power applications.

VS-GB75NA60UF Application Fields

The VS-GB75NA60UF can be used in various applications. It can be used in motor drives, uninteruptable power supplies, and many high-speed switching applications. It is also suitable for use in inverter control, machine tools, current rectification and heavy machinery. In addition, it is also used in renewable energy applications, such as solar and wind power systems.

VS-GB75NA60UF Working Principle

The working principle of VS-GB75NA60UF module is based on the operation of an insulated-gate bipolar transistor (IGBT). An IGBT is a type of transistor which combines the characteristics of a bipolar transistor and a field effect transistor (FET). It has the high-current and low-on-voltage characteristics of a bipolar transistor, with the fast switching times and high input impedance of a FET. In an IGBT, a pin is used to control the flow of current, allowing current to flow when a given voltage level is achieved. The VS-GB75NA60UF works on the same principle, utilizing a switchable voltage output with which to control the current flow.

The VS-GB75NA60UF feature a high input impedance and substantial current handling capacity. This allows the module to be used in digital logic and analog devices, as well as in power converter circuitry. It is designed to handle currents up to 100A, with a switching frequency of up to 100kHz. The VS-GB75NA60UF is also designed to withstand high-voltage surges and extreme temperatures, making it ideal for industrial applications.

Conclusion:

The VS-GB75NA60UF module is a modern designed transistor module suitable for a wide range of applications. It is the perfect choice for applications requiring high current and high speed switching, as it offers a high input impedance with current handling capacity of up to 100A and a switching frequency of up to 100kHz. VS-GB75NA60UF is also capable of withstanding high-voltage surges and extreme temperatures, making it ideal for industrial applications.

The specific data is subject to PDF, and the above content is for reference

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