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VS-GB75TP120U application field and working principle

The VS-GB75TP120U is a high-voltage insulated gate bipolar transistor (IGBT) module with a basic rating of 1200 V, and currents of 75 A for the collector to emitter on-state current (IC). It was manufactured by Vishay Semiconductor, Inc.

The VS-GB75TP120U is primarily used for power conversion and motor control modules, such as in UPS systems of up to 750V DC. It can also be used in various industrial applications, such as rectifiers, welding systems, power supplies, etc. It is well-suited for analog and digital control systems.

Working Principle

The working principle of an IGBT module such as VS-GB75TP120U follows that of a typical insulated gate bipolar transistor (IGBT). An IGBT works by combining the p-type and n-type semiconductors in a structure where the p-type semiconductor is the emitter and the n-type is the collector. One layer, the gate, is insulated by a layer of oxide.

The IGBT can be switched on or off by applying a voltage to the gate of the transistor, and this signal is passed through the oxide layer to either activate or deactivate the current. When the voltage is applied, it forms a channel between the p-type and n-type material. This allows current to flow from the emitter to the collector and the IGBT is turned on. When the voltage is removed, this channel is destroyed and the IGBT switches off.

The advantage of an IGBT over a standard MOSFET is that it can handle higher voltages and currents due to its higher breakdown voltage and higher collector current.This makes it suitable for applications such as motor control and power conversion, where high voltages and currents are needed.

Structure and Features

The VS-GB75TP120U is constructed with a collector emitter voltage (VCES) rated at 1200 V, and has a turn on switching speed of 5 µs, making it suitable for many high-power switching applications.The module also features an integrated charge balancing network, which helps to reduce voltage and current spikes which can damage the module.

The VS-GB75TP120U also features a heat sink which helps to dissipate heat generated by the module during operation. The heat sink is constructed from a die-cast aluminum design, which has excellent thermal properties to maintain the module’s temperature.

Conclusion

The VS-GB75TP120U is a high-voltage insulated gate bipolar transistor (IGBT) module with a basic rating of 1200 V and currents of 75 A for the collector to emitter on-state current (IC). It is primarily used for power conversion and motor control modules such as in UPS systems of up to 750V DC, and various industrial applications. It has a built-in charge balancing network, a fast switching speed and a die-cast aluminum heat sink to dissipate the heat generated during operation.

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